scholarly journals Metallic n‐Type Mg 3 Sb 2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance

2020 ◽  
Vol 32 (16) ◽  
pp. 1908218 ◽  
Author(s):  
Kazuki Imasato ◽  
Chenguang Fu ◽  
Yu Pan ◽  
Max Wood ◽  
Jimmy Jiahong Kuo ◽  
...  
Keyword(s):  
Single Crystals ◽  
Impurity Scattering ◽  
Thermoelectric Performance ◽  
Ionized Impurity Scattering

scholarly journals Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials

2017 ◽  
Vol 114 (40) ◽  
pp. 10548-10553 ◽  
Author(s):  
Jun Mao ◽  
Jing Shuai ◽  
Shaowei Song ◽  
Yixuan Wu ◽  
Rebecca Dally ◽  
...  
Keyword(s):  
Power Factor ◽  
Carrier Mobility ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Substantial Improvement ◽  
Thermoelectric Performance ◽  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Ionized Impurity Scattering ◽  
Higher Carrier Mobility

Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mechanism in n-type Mg3Sb2-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved. In this work, Fe, Co, Hf, and Ta are doped on the Mg site of Mg3.2Sb1.5Bi0.49Te0.01, where the ionized impurity scattering crosses over to mixed ionized impurity and acoustic phonon scattering. A significant improvement in Hall mobility from ∼16 to ∼81 cm2⋅V−1⋅s−1 is obtained, thus leading to a notably enhanced power factor of ∼13 μW⋅cm−1⋅K−2 from ∼5 μW⋅cm−1⋅K−2. A simultaneous reduction in thermal conductivity is also achieved. Collectively, a figure of merit (ZT) of ∼1.7 is obtained at 773 K in Mg3.1Co0.1Sb1.5Bi0.49Te0.01. The concept of manipulating the carrier scattering mechanism to improve the mobility should also be applicable to other material systems.

Ionized impurity scattering of electrons in single crystals of n-type InSb

1980 ◽  
Vol 59 (1) ◽  
pp. K59-K64 ◽  
Author(s):  
P. C. Mathur ◽  
B. R. Sethi ◽  
O. P. Sharma ◽  
M. Nagabhushanam ◽  
V. Haribabu
Keyword(s):  
Single Crystals ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering

Ionized Impurity Scattering in Degenerate Many-Valley Semiconductors

1964 ◽  
Vol 135 (3A) ◽  
pp. A779-A784 ◽  
Author(s):  
John E. Robinson ◽  
Sergio Rodriguez
Keyword(s):  
Impurity Scattering ◽  
Ionized Impurity Scattering

Intrinsically modified thermoelectric performance of alkaline-earth isovalently substituted [Bi2AE2O4][CoO2]y single crystals

2013 ◽  
Vol 114 (4) ◽  
pp. 043705 ◽  
Author(s):  
N. Sun ◽  
S. T. Dong ◽  
B. B. Zhang ◽  
Y. B. Chen ◽  
J. Zhou ◽  
...  
Keyword(s):  
Single Crystals ◽  
Alkaline Earth ◽  
Thermoelectric Performance

Ionized impurity scattering in semimetals

1980 ◽  
Vol 22 (8) ◽  
pp. 3935-3938 ◽  
Author(s):  
R. Resta ◽  
L. Resca
Keyword(s):  
Impurity Scattering ◽  
Ionized Impurity Scattering
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