Atomic‐Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

2019 ◽  
Vol 31 (29) ◽  
pp. 1901405 ◽  
Author(s):  
Yi Rang Lim ◽  
Jin Kyu Han ◽  
Yeoheung Yoon ◽  
Jae‐Bok Lee ◽  
Cheolho Jeon ◽  
...  
Nanoscale ◽  
2021 ◽  
Author(s):  
Yunshan Zhao ◽  
Minrui Zheng ◽  
Jing Wu ◽  
Xin Guan ◽  
Ady Suwardi ◽  
...  

Molybdenum disulfide (MoS2), as a representative transition metal dichalcogenide (TMDC), has attracted significant attention due to its good charge carrier mobility, high on/off ratio in field-effect transistors and novel layer-dependent...


Author(s):  
Aniceto B. Maghirang ◽  
Zhi-Quan Huang ◽  
Rovi Angelo B. Villaos ◽  
Chia-Hsiu Hsu ◽  
Liang-Ying Feng ◽  
...  

Abstract Ultrathin Janus two-dimensional (2D) materials are attracting intense interest currently. Substitutional doping of 2D transition metal dichalcogenides (TMDs) is of importance for tuning and possible enhancement of their electronic, physical and chemical properties toward industrial applications. Using systematic first-principles computations, we propose a class of Janus 2D materials based on the monolayers MX2 (M = V, Nb, Ta, Tc, or Re; X = S, Se, or Te) with halogen (F, Cl, Br, or I) or pnictogen (N, P, As, Sb, or Bi) substitution. Nontrivial phases are obtained on pnictogen substitution of group VB (V, Nb, or Ta), whereas for group VIIB (Tc or Re), the nontrivial phases are obtained for halogen substitution. Orbital analysis shows that the nontrivial phase is driven by the splitting of M-dyz and M-dxz orbitals. Our study demonstrates that the Janus 2D materials have the tunability and suitability for synthesis under various conditions.


Author(s):  
G.A. Botton ◽  
C.J. Humphreys

Transition metal aluminides are of great potential interest for high temperature structural applications. Although these materials exhibit good mechanical properties at high temperature, their use in industrial applications is often limited by their intrinsic room temperature brittleness. Whilst this particular yield behaviour is directly related to the defect structure, the properties of the defects (in particular the mobility of dislocations and the slip system on which these dislocations move) are ultimately determined by the electronic structure and bonding in these materials. The lack of ductility has been attributed, at least in part, to the mixed bonding character (metallic and covalent) as inferred from ab-initio calculations. In this work, we analyse energy loss spectra and discuss the features of the near edge structure in terms of the relevant electronic states in order to compare the predictions on bonding directly with spectroscopic experiments. In this process, we compare spectra of late transition metal (TM) to early TM aluminides (FeAl and TiAl) to assess whether differences in bonding can also be detected. This information is then discussed in terms of bonding changes at grain boundaries in NiAl.


Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  

Nano Letters ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 3341-3354
Author(s):  
Seung-Young Seo ◽  
Dong-Hwan Yang ◽  
Gunho Moon ◽  
Odongo F. N. Okello ◽  
Min Yeong Park ◽  
...  

2021 ◽  
Vol 3 (1) ◽  
pp. 272-278
Author(s):  
Pilar G. Vianna ◽  
Aline dos S. Almeida ◽  
Rodrigo M. Gerosa ◽  
Dario A. Bahamon ◽  
Christiano J. S. de Matos

The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.


2021 ◽  
pp. 2006601
Author(s):  
Soo Ho Choi ◽  
Hyung‐Jin Kim ◽  
Bumsub Song ◽  
Yong In Kim ◽  
Gyeongtak Han ◽  
...  

2021 ◽  
Vol 103 (17) ◽  
Author(s):  
Yihao Wang ◽  
Changzheng Xie ◽  
Junbo Li ◽  
Zan Du ◽  
Liang Cao ◽  
...  

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