2D Electron Gas and Oxygen Vacancy Induced High Oxygen Evolution Performances for Advanced Co 3 O 4 /CeO 2 Nanohybrids

2019 ◽  
Vol 31 (21) ◽  
pp. 1900062 ◽  
Author(s):  
Ying Liu ◽  
Chao Ma ◽  
Qinghua Zhang ◽  
Wei Wang ◽  
Pengfei Pan ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Evolution ◽  
Electron Gas ◽  
High Oxygen ◽  
2D Electron Gas

scholarly journals (La0.65Sr0.3)0.95FeO3−δ perovskite with high oxygen vacancy as efficient bifunctional electrocatalysts for Zn–air batteries

RSC Advances ◽  
2021 ◽  
Vol 11 (62) ◽  
pp. 38977-38981
Author(s):  
Liyang Luo ◽  
Zhongyi Liu ◽  
Zhiyuan Wang
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Reduction Reaction ◽  
Oxygen Reduction ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
Low Cost ◽  
Reduction Reaction ◽  
High Oxygen ◽  
Highly Efficient ◽  
Bifunctional Electrocatalysts

Developing low-cost, highly efficient electrocatalysts for the oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) is desirable for rechargeable metal–air batteries.

scholarly journals High Oxygen Evolution Activity of Tungsten Bronze Oxides Boosted by Anchoring of Co 2+ at Nb 5+ Sites Accompanied by Substantial Oxygen Vacancy

2020 ◽  
Vol 7 (22) ◽  
pp. 2002242
Author(s):  
Xiaoning Li ◽  
Huan Liu ◽  
Yanhua Sun ◽  
Liuyang Zhu ◽  
Xiaofeng Yin ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Evolution ◽  
Tungsten Bronze ◽  
High Oxygen

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

Enhancing Bifunctional Electrodes of Oxygen Vacancy Abundant ZnCo2O4 Nanosheets for Supercapacitor and Oxygen Evolution

2021 ◽  
pp. 130583
Author(s):  
Kun Xiang ◽  
Dan Wu ◽  
Yun Fan ◽  
Wen You ◽  
Dongdong Zhang ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Evolution

WSe2/2D electron gas heterojunction on KTaO3 for room-temperature giant photoconductivity

2020 ◽  
Author(s):  
Ze Zhou ◽  
Gensheng Huang ◽  
Jiaxin Shen ◽  
Shuainan Gong ◽  
Pengfei Zhou ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electron Gas ◽  
2D Electron Gas

scholarly journals TRANSPORT PROPERTIES OF 2D ELECTRON GAS IN AN n-InGaAs/GaAs DQW IN A VICINITY OF LOW MAGNETIC-FIELD-INDUCED HALL INSULATOR–QUANTUM HALL LIQUID TRANSITION

2007 ◽  
Vol 06 (03n04) ◽  
pp. 173-177
Author(s):  
YU. G. ARAPOV ◽  
S. V. GUDINA ◽  
G. I. HARUS ◽  
V. N. NEVEROV ◽  
N. G. SHELUSHININA ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Quantum Hall ◽  
Zero Magnetic Field ◽  
Double Quantum ◽  
Ballistic Regime ◽  
2D Electron Gas ◽  
Double Quantum Well ◽  
Liquid Transition ◽  
Low Magnetic Field

The resistivity (ρ) of low mobility dilute 2D electron gas in an n- InGaAs / GaAs double quantum well (DQW) exhibits the monotonic "insulating-like" temperature dependence (dρ/dT < 0) at T = 1.8–70 K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kBTτ/ħ > 0.1–3.5) for our samples, and the electron density is on an "insulating" side of the so-called B = 0 2D metal–insulator transition. We show that the observed features of localization and Landau quantization in a vicinity of the low magnetic-field-induced insulator–quantum Hall liquid transition is due to the σxy(T) anomalous T-dependence.

scholarly journals Universal Structural Influence on the 2D Electron Gas at SrTiO 3 Surfaces

2021 ◽  
pp. 2100602
Author(s):  
Eduardo B. Guedes ◽  
Stefan Muff ◽  
Walber H. Brito ◽  
Marco Caputo ◽  
Hang Li ◽  
...  
Keyword(s):  
Electron Gas ◽  
2D Electron Gas ◽  
Structural Influence

Interwell radiative recombination of a 2D electron gas in electrically biased double quantum wells

1998 ◽  
Vol 41 (2) ◽  
pp. 109-112 ◽  
Author(s):  
Vladislav B Timofeev ◽  
A V Larionov ◽  
J Zeman ◽  
G Martinez ◽  
J Hvam ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Electron Gas ◽  
Double Quantum ◽  
2D Electron Gas
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