Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage-Tunable Spintronic Devices

2018 ◽  
Vol 30 (40) ◽  
pp. 1802902 ◽  
Author(s):  
Mengmeng Guan ◽  
Lei Wang ◽  
Shishun Zhao ◽  
Ziyao Zhou ◽  
Guohua Dong ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Spintronic Devices ◽  
Bilayer System ◽  
Magnetic Insulator

scholarly journals Deficiency of the bulk spin Hall effect model for spin-orbit torques in magnetic-insulator/heavy-metal heterostructures

2017 ◽  
Vol 95 (24) ◽  
Author(s):  
Junxue Li ◽  
Guoqiang Yu ◽  
Chi Tang ◽  
Yizhou Liu ◽  
Zhong Shi ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Hall Effect ◽  
Spin Hall Effect ◽  
Spin Orbit ◽  
Effect Model ◽  
Magnetic Insulator

scholarly journals Topological Hall effect at above room temperature in heterostructures composed of a magnetic insulator and a heavy metal

2019 ◽  
Vol 2 (5) ◽  
pp. 182-186 ◽  
Author(s):  
Qiming Shao ◽  
Yawen Liu ◽  
Guoqiang Yu ◽  
Se Kwon Kim ◽  
Xiaoyu Che ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Hall Effect ◽  
Room Temperature ◽  
Topological Hall Effect ◽  
Magnetic Insulator

Magnetic proximity effect in magnetic-insulator/heavy-metal heterostructures across the compensation temperature

2021 ◽  
Vol 104 (9) ◽  
Author(s):  
Jackson J. Bauer ◽  
Patrick Quarterman ◽  
Alexander J. Grutter ◽  
Bharat Khurana ◽  
Subhajit Kundu ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Proximity Effect ◽  
Compensation Temperature ◽  
Magnetic Insulator ◽  
Magnetic Proximity Effect

Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices

2019 ◽  
Vol 5 (8) ◽  
pp. 1900134 ◽  
Author(s):  
Shouzhong Peng ◽  
Daoqian Zhu ◽  
Jiaqi Zhou ◽  
Boyu Zhang ◽  
Anni Cao ◽  
...  
Keyword(s):  
Heavy Metal ◽  
High Performance ◽  
Ferromagnetic Metal ◽  
Metal Interface ◽  
Spintronic Devices

scholarly journals Interface-induced field-like optical spin torque in a ferromagnet/heavy metal heterostructure

Nanophotonics ◽  
2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Satoshi Iihama ◽  
Kazuaki Ishibashi ◽  
Shigemi Mizukami
Keyword(s):  
Heavy Metal ◽  
Ferromagnetic Layer ◽  
Optical Manipulation ◽  
Spin Torque ◽  
Spintronic Devices ◽  
Ferromagnetic Thin Films ◽  
Plane Field ◽  
Structural Inversion ◽  
Induced Field ◽  
Metallic Ferromagnet

AbstractThe manipulation of magnetization in a metallic ferromagnet by using optical helicity has been much attracted attention for future opto-spintronic devices. The optical helicity–induced torques on the magnetization, optical spin torque, have been observed in ferromagnetic thin films recently. However, the interfacial effect of the optical spin torque in ferromagnet/nonmagnetic heavy metal heterostructures have not been addressed so far, which are widely utilized to efficiently control magnetization via electrical means. Here, we studied optical spin torque vectors in the ferromagnet/nonmagnetic heavy metal heterostructures and observed that in-plane field-like optical spin torque was significantly increased with decreasing ferromagnetic layer thicknesses. The interfacial field-like optical spin torque was explained by the optical Rashba–Edelstein effect caused by the structural inversion symmetry breaking. This work will aid in the efficient optical manipulation of thin film nanomagnets using optical helicity.

scholarly journals Electrical manipulation of antiferromagnetic easy axis in IrMn/NiFe exchange-biased structures

2021 ◽  
Author(s):  
Jaimin Kang ◽  
Jeongchun Ryu ◽  
Jong-Guk Choi ◽  
Taekhyeon Lee ◽  
Jaehyeon Park ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Exchange Bias ◽  
Easy Axis ◽  
Inversion Symmetry ◽  
Spin Orbit ◽  
Key Technology ◽  
Spintronic Devices ◽  
Electrical Control ◽  
Multi Level ◽  
Electrical Manipulation

Abstract Electrical control of antiferromagnetic moment is a key technology of antiferromagnet-based spintronics, which promises favourable device characteristics of ultrafast operation and high-density integration compared to conventional ferromagnet-based devices. To date, the manipulation of antiferromagnetic moments has been demonstrated in epitaxial antiferromagnets with broken inversion symmetry or antiferromagnets interfaced with a heavy metal, in which spin-orbit torque (SOT) drives the antiferromagnetic domain wall. Here, we report electrical manipulation of the antiferromagnetic easy axis in IrMn/NiFe bilayers without a heavy metal. We show that the direction of the antiferromagnetic easy axis and associated exchange bias is gradually modulated between up to ±22 degrees by in-plane current, which is independent of the NiFe thickness, however. This suggests that spin currents arising in the IrMn layer exert SOTs on uncompensated antiferromagnetic moments at the interface and then rotate the antiferromagnetic moments coherently. Furthermore, the memristive features are preserved in sub-micron devices, facilitating nanoscale multi-level antiferromagnetic spintronic devices.

scholarly journals Current-induced manipulation of exchange bias in IrMn/NiFe bilayer structures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jaimin Kang ◽  
Jeongchun Ryu ◽  
Jong-Guk Choi ◽  
Taekhyeon Lee ◽  
Jaehyeon Park ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Domain Wall ◽  
Electric Current ◽  
Exchange Bias ◽  
High Density ◽  
Inversion Symmetry ◽  
Spin Orbit ◽  
Spintronic Devices ◽  
Electrical Control ◽  
Multi Level

AbstractThe electrical control of antiferromagnetic moments is a key technological goal of antiferromagnet-based spintronics, which promises favourable device characteristics such as ultrafast operation and high-density integration as compared to conventional ferromagnet-based devices. To date, the manipulation of antiferromagnetic moments by electric current has been demonstrated in epitaxial antiferromagnets with broken inversion symmetry or antiferromagnets interfaced with a heavy metal, in which spin-orbit torque (SOT) drives the antiferromagnetic domain wall. Here, we report current-induced manipulation of the exchange bias in IrMn/NiFe bilayers without a heavy metal. We show that the direction of the exchange bias is gradually modulated up to ±22 degrees by an in-plane current, which is independent of the NiFe thickness. This suggests that spin currents arising in the IrMn layer exert SOTs on uncompensated antiferromagnetic moments at the interface which then rotate the antiferromagnetic moments. Furthermore, the memristive features are preserved in sub-micron devices, facilitating nanoscale multi-level antiferromagnetic spintronic devices.

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