scholarly journals Stretchable Motion Memory Devices Based on Mechanical Hybrid Materials

2017 ◽  
Vol 29 (34) ◽  
pp. 1701780 ◽  
Author(s):  
Yaqing Liu ◽  
Zhiyuan Liu ◽  
Bowen Zhu ◽  
Jiancan Yu ◽  
Ke He ◽  
...  
Keyword(s):  
Hybrid Materials ◽  
Memory Devices

Recent Advances in Memory Devices with Hybrid Materials

2018 ◽  
Vol 5 (1) ◽  
pp. 1800519 ◽  
Author(s):  
Bohee Hwang ◽  
Jang-Sik Lee
Keyword(s):  
Hybrid Materials ◽  
Memory Devices ◽  
Recent Advances

scholarly journals Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticle-polythiophene hybrid materials

2019 ◽  
Vol 1 (7) ◽  
pp. 2718-2726
Author(s):  
T. Zhang ◽  
D. Guérin ◽  
F. Alibart ◽  
D. Troadec ◽  
D. Hourlier ◽  
...  
Keyword(s):  
Gold Nanoparticle ◽  
Hybrid Materials ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Forming Process ◽  
Chemical Mechanisms ◽  
Physical Mechanisms ◽  
Physical And Chemical

Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a requisite for better performance.

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

UV Curable Organic-Inorganic Hybrid Materials

2000 ◽  
Vol 628 ◽  
Author(s):  
Guang-Way Jang ◽  
Ren-Jye Wu ◽  
Yuung-Ching Sheen ◽  
Ya-Hui Lin ◽  
Chi-Jung Chang
Keyword(s):  
Hybrid Materials ◽  
Colloidal Silica ◽  
Sol Gel ◽  
Solution Ph ◽  
Uv Curable ◽  
Inorganic Hybrid ◽  
Degradation Temperature ◽  
Sol Gel Process ◽  
The Stability ◽  
Thermal Degradation Temperature

This work successfully prepared an UV curable organic-inorganic hybrid material consisting of organic modified colloidal silica. Applications of UV curable organic-inorganic hybrid materials include abrasion resistant coatings, photo-patternable thin films and waveguides. Colloidal silica containing reactive functional groups were also prepared by reacting organic silane and tetraethyl orthosilicate (TEOS) using sol-gel process. In addition, the efficiency of grafting organic moiety onto silica nanoparticles was investigated by applying TGA and FTIR techniques. Experimental results indicated a strong interdependence between surface modification efficiency and solution pH. Acrylate-SiO2 hybrid formation could result in a shifting of thermal degradation temperature of organic component from about 200°C to near 400°C. In addition, the stability of organic modified colloidal silica in UV curable formula and the physical properties of resulting coatings were discussed. Furthermore, the morphology of organic modified colloidal silica was investigated by performing TEM and SEM studies‥

Adaptive Interference Mitigation for Multilevel Flash Memory Devices

2011 ◽  
Vol E94-A (11) ◽  
pp. 2453-2457
Author(s):  
Myeongwoon JEON ◽  
Kyungchul KIM ◽  
Sungkyu CHUNG ◽  
Seungjae CHUNG ◽  
Beomju SHIN ◽  
...  
Keyword(s):  
Flash Memory ◽  
Interference Mitigation ◽  
Memory Devices

In-Line Defect to Bitmap Signature Correlation: A Shortcut to Physical FA Results

2000 ◽  
Author(s):  
Julie Segal ◽  
Arman Sagatelian ◽  
Bob Hodgkins ◽  
Tom Ho ◽  
Ben Chu ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Integrated Circuit ◽  
Failure Mechanisms ◽  
Memory Devices ◽  
Line Defect ◽  
Yield Improvement ◽  
Electrical Test ◽  
Large Numbers ◽  
Improvement Process ◽  
Existing Data

Abstract Physical failure analysis (FA) of integrated circuit devices that fail electrical test is an important part of the yield improvement process. This article describes how the analysis of existing data from arrayed devices can be used to replace physical FA of some electrical test failures, and increase the value of physical FA results. The discussion is limited to pre-repair results. The key is to use classified bitmaps and determine which signature classification correlates to which type of in-line defect. Using this technique, physical failure mechanisms can be determined for large numbers of failures on a scale that would be unfeasible with de-processing and physical FA. If the bitmaps are classified, two-way correlation can be performed: in-line defect to bitmap failure, as well as bitmap signature to in-line defect. Results also demonstrate the value of analyzing memory devices failures, even those that can be repaired, to gain understanding of defect mechanisms.

High-Throughput, Site-Specific Sample Prep of Ultra-Thin TEM Lamella for Process Metrology and Failure Analysis

2012 ◽  
Author(s):  
Roger Alvis ◽  
Jeff Blackwood ◽  
Sang-Hoon Lee ◽  
Matthew Bray
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Process Monitoring ◽  
High Throughput ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Memory Devices ◽  
Site Specific ◽  
Critical Dimensions ◽  
Tem Lamella

Abstract Semiconductor devices with critical dimensions less than 20nm are now being manufactured in volume. A challenge facing the failure analysis and process-monitoring community is two-fold. The first challenge of TEM sample prep of such small devices is that the basic need to end-point on a feature-of-interest pushes the imaging limit of the instrument being used to prepare the lamella. The second challenge posed by advanced devices is to prepare an artifact-free lamella from non-planar devices such as finFETs as well as from structures incorporating ‘non-traditional’ materials. These challenges are presently overcome in many advanced logic and memory devices in the focused ion beam-based TEM sample preparation processes by inverting the specimen prior to thinning to electron transparency. This paper reports a highthroughput method for the routine preparation of artifact-free TEM lamella of 20nm thickness, or less.

Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices

1997 ◽  
Author(s):  
S.-S. Lee ◽  
J.-S. Seo ◽  
N.-S. Cho ◽  
S. Daniel
Keyword(s):  
Thermal Emission ◽  
Test Cases ◽  
Memory Devices ◽  
Front Side ◽  
Emission Analysis ◽  
Intensity Attenuation ◽  
Analysis Techniques ◽  
Defect Sites ◽  
Emission Microscopy ◽  
Microscopy Techniques

Abstract Both photo- and thermal emission analysis techniques are used from the backside of the die colocate defect sites. The technique is important in that process and package technologies have made front-side analysis difficult or impossible. Several test cases are documented. Intensity attenuation through the bulk of the silicon does not compromise the usefulness of the technique in most cases.

Failure Analysis Strategies for Multistacked Memory Devices with TSV Interconnects

2015 ◽  
Author(s):  
Frank Altmann ◽  
Christian Grosse ◽  
Falk Naumann ◽  
Jens Beyersdorfer ◽  
Tony Veches
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Memory Devices ◽  
Metallographic Cross Section ◽  
Electron Beam Induced Current ◽  
Thermal Simulations ◽  
Lock In ◽  
Non Destructive

Abstract In this paper we will demonstrate new approaches for failure analysis of memory devices with multiple stacked dies and TSV interconnects. Therefore, TSV specific failure modes are studied on daisy chain test samples. Two analysis flows for defect localization implementing Electron Beam Induced Current (EBAC) imaging and Lock-in-Thermography (LIT) as well as adapted Focused Ion Beam (FIB) preparation and defect characterization by electron microscopy will be discussed. The most challenging failure mode is an electrical short at the TSV sidewall isolation with sub-micrometer dimensions. It is shown that the leakage path to a certain TSV within the stack can firstly be located by applying LIT to a metallographic cross section and secondly pinpointing by FIB/SEM cross-sectioning. In order to evaluate the potential of non-destructive determination of the lateral defect position, as well as the defect depth from only one LIT measurement, 2D thermal simulations of TSV stacks with artificial leakages are performed calculating the phase shift values per die level.

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