High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

2016 ◽  
Vol 28 (32) ◽  
pp. 6985-6992 ◽  
Author(s):  
Jaewoo Shim ◽  
Aely Oh ◽  
Dong-Ho Kang ◽  
Seyong Oh ◽  
Sung Kyu Jang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
High Performance ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

High-performance spin-coated aluminum oxide dielectric fabricated by a simple oxygen plasma-treatment process

2018 ◽  
Vol 51 (36) ◽  
pp. 365101 ◽  
Author(s):  
Jinglin Wei ◽  
Zhiqiang Fang ◽  
Junbiao Peng ◽  
Wei Cai ◽  
Zhennan Zhu ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Plasma Treatment ◽  
High Performance ◽  
Oxygen Plasma ◽  
Treatment Process ◽  
Oxygen Plasma Treatment

scholarly journals Effect of Plasma-Treatment of Interleaved Thermoplastic Films on Delamination in Interlayer Fibre Hybrid Composite Laminates

Polymers ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2834
Author(s):  
Salvatore Giacomo Marino ◽  
Florian Mayer ◽  
Alexander Bismarck ◽  
Gergely Czél
Keyword(s):  
Plasma Treatment ◽  
Composite Laminates ◽  
High Performance ◽  
Oxygen Plasma ◽  
Mechanical Performance ◽  
Hybrid Composites ◽  
Acrylonitrile Butadiene Styrene ◽  
Tensile Tests ◽  
Oxygen Plasma Treatment ◽  
Engineering Structures

Safe, light, and high-performance engineering structures may be generated by adopting composite materials with stable damage process (i.e., without catastrophic delamination). Interlayer hybrid composites may fail stably by suppressing catastrophic interlayer delamination. This paper provides a detailed analysis of delamination occurring in poly(acrylonitrile-butadiene-styrene) (ABS) or polystyrene (PS) film interleaved carbon-glass/epoxy hybrid composites. The ABS films toughened the interfaces of the hybrid laminates, generating materials with higher mode II interlaminar fracture toughness (GIIC), delamination stress (σdel), and eliminating the stress drops observed in the reference baseline material, i.e., without interleaf films, during tensile tests. Furthermore, stable behaviour was achieved by treating the ABS films in oxygen plasma. The mechanical performance (GIIC and σdel) of hybrid composites containing PS films, were initially reduced but increased after oxygen plasma treatment. The plasma treatment introduced O-C=O and O-C-O-O functional groups on the PS surfaces, enabling better epoxy/PS interactions. Microscopy analysis provided evidence of the toughening mechanisms, i.e., crack deflection, leading plasma-treated PS to stabilise delamination.

scholarly journals Thin-Film Transistors: High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment (Adv. Mater. 32/2016)

2016 ◽  
Vol 28 (32) ◽  
pp. 6984-6984 ◽  
Author(s):  
Jaewoo Shim ◽  
Aely Oh ◽  
Dong-Ho Kang ◽  
Seyong Oh ◽  
Sung Kyu Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

Reactive oxygen plasma treatment of 3D-printed carbon electrodes towards high-performance electrochemical sensors

2021 ◽  
Vol 347 ◽  
pp. 130651 ◽  
Author(s):  
Jian F.S. Pereira ◽  
Raquel G. Rocha ◽  
Silvia V.F. Castro ◽  
Afonso F. João ◽  
Pedro H.S. Borges ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
High Performance ◽  
Oxygen Plasma ◽  
Electrochemical Sensors ◽  
Reactive Oxygen ◽  
Carbon Electrodes ◽  
Oxygen Plasma Treatment ◽  
3D Printed

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

LDI-MS examination of oxygen plasma modified polymer for designing tailored implant biointerfaces

RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Parylene C ◽  
Modified Polymer

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..

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