Interplay of Solvent Additive Concentration and Active Layer Thickness on the Performance of Small Molecule Solar Cells

2014 ◽  
Vol 26 (43) ◽  
pp. 7308-7316 ◽  
Author(s):  
John A. Love ◽  
Samuel D. Collins ◽  
Ikuhiro Nagao ◽  
Subhrangsu Mukherjee ◽  
Harald Ade ◽  
...  
2015 ◽  
Vol 3 (44) ◽  
pp. 22274-22279 ◽  
Author(s):  
Qian Zhang ◽  
Bin Kan ◽  
Xiangjian Wan ◽  
Hua Zhang ◽  
Feng Liu ◽  
...  

The thickness dependence of the photovoltaic performance for devices based on the small molecule DR3TSBDT:PC71BM was systematically investigated and the power conversion efficiencies are found to be relatively insensitive to the thickness.


2013 ◽  
Vol 14 (1) ◽  
pp. 74-79 ◽  
Author(s):  
Gon Namkoong ◽  
Jaemin Kong ◽  
Matthew Samson ◽  
In-Wook Hwang ◽  
Kwanghee Lee

Author(s):  
Ritesh Kant Gupta ◽  
Rabindranath Garai ◽  
Maimur Hossain ◽  
Mohammad Adil Afroz ◽  
Dibashmoni Kalita ◽  
...  

Achieving high power conversion efficiency (PCE) polymer solar cells (PSCs) has been very challenging and the ultimate goal for their commercialization. Precise investigation of the active layer morphology and newer...


2020 ◽  
Vol 8 (24) ◽  
pp. 8191-8198
Author(s):  
Ritesh Kant Gupta ◽  
Rabindranath Garai ◽  
Mohammad Adil Afroz ◽  
Parameswar Krishnan Iyer

Fabrication of high performance polymer solar cells through the hot-casting technique, which modulates the thickness and roughness of the active layer and also the carrier mobility of the solar cell devices.


2021 ◽  
Author(s):  
Bablu K. Ghosh ◽  
Ismail Saad ◽  
Khairul A Mahmood

Abstract CdTe thin film (TF) solar cells are most promising in commercial stage photovoltaic (PV) technologies. Cell contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. Thin film PV cells voltage and fill factor loss lessening purpose carrier selective back contact selection with band matching interface layers are essential. Beside that buffer and active layer thickness selection is vital for field assisted selective carrier collection. The suitable emitter or buffer layer thickness and band gap matching to the active layer is potential to lessen parasitic absorption and shallow recombination loss. In this purpose SCAPS software based ZnO and SnO2 TCO as well as CdS and CdSe buffer impact are numerically analyzed. The TCO, emitter, back surface field layer and metal contacts effects on electrical performance is studied. In the model, TCO and back contact barrier thickness is shown significant to progress electrical performance. Eventually, open circuit voltage Voc = 0.9757 V and 19.92% efficiency is achieved for 90 nm of ZnTe BSF with ZnO TCO and CdS emitter layer of optimized thickness.


2013 ◽  
Vol 1 (39) ◽  
pp. 12345 ◽  
Author(s):  
Antonio Guerrero ◽  
Núria F. Montcada ◽  
Jon Ajuria ◽  
Ikerne Etxebarria ◽  
Roberto Pacios ◽  
...  

2021 ◽  
Vol 11 (24) ◽  
pp. 11668
Author(s):  
Mari Carmen López-González ◽  
Gonzalo del Pozo ◽  
Diego Martín-Martín ◽  
Laura Muñoz-Díaz ◽  
José Carlos Pérez-Martínez ◽  
...  

Perovskite solar cells (PSCs) have become very popular due to the high efficiencies achieved. Nevertheless, one of the main challenges for their commercialization is to solve their instability issues. A thorough understanding of the processes taking place in the device is key for the development of this technology. Herein, J-V measurements have been performed to characterize PSCs with different active layer thicknesses. The solar cells’ parameters in pristine devices show no significant dependence on the active layer thickness. However, the evolution of the solar cells’ efficiency under ISOS-L1 protocol reveals a dramatic burn-in degradation, more pronounced for thicker devices. Samples were also characterized using impedance spectroscopy (IS) at different degradation stages, and data were fitted to a three RC/RCPE circuit. The low frequency capacitance in the thickest samples suffers a strong increase with time, which suggests a significant growth in the mobile ion population. This increase in the ion density partially screens the electric field, which yields a reduction in the extracted current and, consequently, the efficiency. This paper has been validated with two-dimensional numerical simulations that corroborate (i) the decrease in the internal electric field in dark conditions in 650 nm devices, and (ii) the consequent reduction in the carrier drift and, therefore, of the effective current extraction and efficiency.


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