scholarly journals Spin-Coating: In Situ Studies of Phase Separation and Crystallization Directed by Marangoni Instabilities During Spin-Coating (Adv. Mater. 48/2013)

2013 ◽  
Vol 25 (48) ◽  
pp. 6915-6915
Author(s):  
Daniel T. W. Toolan ◽  
Nikki Pullan ◽  
Michael J. Harvey ◽  
Paul D. Topham ◽  
Jonathan R. Howse
Keyword(s):  
Phase Separation ◽  
Spin Coating ◽  
In Situ Studies

In Situ Studies of Phase Separation and Crystallization Directed by Marangoni Instabilities During Spin-Coating

2013 ◽  
Vol 25 (48) ◽  
pp. 7033-7037 ◽  
Author(s):  
Daniel T. W. Toolan ◽  
Nikki Pullan ◽  
Michael J. Harvey ◽  
Paul D. Topham ◽  
Jonathan R. Howse
Keyword(s):  
Phase Separation ◽  
Spin Coating ◽  
In Situ Studies

Directed phase separation of PFO:PS blends during spin-coating using feedback controlled in situ stroboscopic fluorescence microscopy

2013 ◽  
Vol 1 (11) ◽  
pp. 3587 ◽  
Author(s):  
Daniel T. W. Toolan ◽  
Andrew J. Parnell ◽  
Paul D. Topham ◽  
Jonathan R. Howse
Keyword(s):  
Phase Separation ◽  
Fluorescence Microscopy ◽  
Spin Coating

In situ studies of the molecular packing dynamics of bulk-heterojunction solar cells induced by the processing additive 1-chloronaphthalene

2015 ◽  
Vol 3 (15) ◽  
pp. 7719-7726 ◽  
Author(s):  
Sooncheol Kwon ◽  
Jin Kuen Park ◽  
Jehan Kim ◽  
Geunjin Kim ◽  
Kilho Yu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Phase Separation ◽  
Bulk Heterojunction ◽  
Molecular Packing ◽  
Heterojunction Solar Cells ◽  
In Situ Studies ◽  
Bulk Heterojunction Solar Cells

In situGIWAXS was used to monitor the molecular packing dynamics and phase separation of bulk-heterojunction composites with a processing additive 1-chloronaphthalene.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Sign in / Sign up

Export Citation Format

Share Document