Record High Electron Mobility of 6.3 cm2V−1s−1Achieved for Polymer Semiconductors Using a New Building Block

2014 ◽  
Vol 26 (17) ◽  
pp. 2636-2642 ◽  
Author(s):  
Bin Sun ◽  
Wei Hong ◽  
Zhuangqing Yan ◽  
Hany Aziz ◽  
Yuning Li
Keyword(s):  
Electron Mobility ◽  
Building Block ◽  
High Electron ◽  
High Electron Mobility ◽  
Polymer Semiconductors

Nitrile-substituted thienyl and phenyl units as building blocks for high performance n-type polymer semiconductors

2015 ◽  
Vol 6 (36) ◽  
pp. 6579-6584 ◽  
Author(s):  
Yu Xiong ◽  
Xiaolan Qiao ◽  
Hongxiang Li
Keyword(s):  
Conjugated Polymers ◽  
Electron Mobility ◽  
High Performance ◽  
Building Blocks ◽  
High Electron ◽  
Ambient Conditions ◽  
High Electron Mobility ◽  
Polymer Semiconductors

Conjugated polymers containing nitrile-substituted thienyl and phenyl units displayed high electron mobility under ambient conditions.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Polymer Crystals: Approaching Crystal Structure and High Electron Mobility in Conjugated Polymer Crystals (Adv. Mater. 10/2021)

2021 ◽  
Vol 33 (10) ◽  
pp. 2170075
Author(s):  
Ze‐Fan Yao ◽  
Yu‐Qing Zheng ◽  
Jin‐Hu Dou ◽  
Yang Lu ◽  
Yi‐Fan Ding ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Mobility ◽  
Conjugated Polymer ◽  
High Electron ◽  
High Electron Mobility ◽  
Polymer Crystals

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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