2-Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2(1-x)Se2xMonolayers

2013 ◽  
Vol 26 (9) ◽  
pp. 1399-1404 ◽  
Author(s):  
John Mann ◽  
Quan Ma ◽  
Patrick M. Odenthal ◽  
Miguel Isarraraz ◽  
Duy Le ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Band Gaps ◽  
Metal Dichalcogenides ◽  
Direct Band

Structural, Electronic and Optical Properties of Transition Metal Dichalcogenides Layer PtS2 (Se2) for Nano Devices Applications

2021 ◽  
Vol 886 ◽  
pp. 48-56
Author(s):  
Rusul A. Ghazi ◽  
Dhay Ali Sabur ◽  
Ruaa S. Al-Hasnawy ◽  
Haider O. Muhsen ◽  
Bahjat B. Kadhim ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Band Gaps ◽  
Two Dimensional ◽  
Electronic And Optical Properties ◽  
New Class ◽  
Metal Dichalcogenides ◽  
Direct Band ◽  
Indirect Band Gap

Monolayer materials are promising material in applications, such as possess some layers with sturdy in-plane bonds. These materials represents two-dimensional (2D) materials which are possess a vertical weak Van der Waals (VdW) interactions sandwiched among the neighboring sheets. These structures of layers offer the chance to be split to free atomic layers. So new class material with two dimensional transition metal dichalcogenides which includes PtS2 (Se2) have unique geometric structural, electronic and optical properties are studied. It has attracted the attention of many researchers for its extensive applications in (catalysis, sensing, electronics, and optoelectronics devices). It has been disclosed from the outcomes that these monolayers are dynamically stable according to the phonon calculations. Also, the direct band gaps located at K point for MoS2 and MoSe2 are 1.67 eV and 1.484 eV and for PtS2 and PtSe2 located between Γ-M points are 1.887 and 1.66, respectively. Also, the PtS2 have indirect band gap of about 1.775 eV situated at KΓ- ΓM and for PtSe2 is 1.401 eV at Γ- ΓM path. The results show that the maximum absorption coefficients are between 14×104 and 16.4×104 cm-1 for PtS2 and MoSe2, respectively. Besides, the maximum conductivities are between 2.09×101 and 3.65×1015 1/s for PtSe2 and MoS2, and the major values Likewise, the optical properties determined over rang energy 0.30 eV. The work function is equal 6.197eV for PtS2 and 5.628eV for PtSe2. It has been shown by studying photon dispersion of both monolayers that it is stable because it does not contain imaginary frequencies.

scholarly journals Strain dependence of band gaps and exciton energies in pure and mixed transition-metal dichalcogenides

2016 ◽  
Vol 94 (15) ◽  
Author(s):  
Rodrick Kuate Defo ◽  
Shiang Fang ◽  
Sharmila N. Shirodkar ◽  
Georgios A. Tritsaris ◽  
Athanasios Dimoulas ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Band Gaps ◽  
Strain Dependence ◽  
Metal Dichalcogenides ◽  
Mixed Transition

Tuning Band Gaps of Transition Metal Dichalcogenides WX2 (X = S, Se) Nanoribbons by External Strain

2016 ◽  
Vol 16 (8) ◽  
pp. 8090-8095 ◽  
Author(s):  
Zhixiang Zhang ◽  
Jiqing Wang ◽  
Changsheng Song ◽  
Huibing Mao ◽  
Qiang Zhao
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Band Gaps ◽  
Metal Dichalcogenides ◽  
External Strain

scholarly journals Valley excitons in two-dimensional semiconductors

2015 ◽  
Vol 2 (1) ◽  
pp. 57-70 ◽  
Author(s):  
Hongyi Yu ◽  
Xiaodong Cui ◽  
Xiaodong Xu ◽  
Wang Yao
Keyword(s):  
Transition Metal ◽  
Bound States ◽  
Degrees Of Freedom ◽  
Transition Metal Dichalcogenides ◽  
Visible Range ◽  
Two Dimensional ◽  
New Class ◽  
Strong Coulomb ◽  
Metal Dichalcogenides ◽  
Direct Band

Abstract Monolayer group-VIB transition-metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges and the valley-dependent optical selection rules for interband transitions. Here, we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition-metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom.

scholarly journals Light fostered supercapacitor performance of multi-layered ReS2 grown on conducting substrates

2021 ◽  
Author(s):  
Nitika Arya ◽  
Piyush Kumar Avasthi ◽  
Viswanath Balakrishnan
Keyword(s):  
Energy Storage ◽  
Transition Metal ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
Direct Band Gap ◽  
Metal Dichalcogenides ◽  
Direct Band ◽  
Supercapacitor Performance ◽  
Energy Storage Applications

Light fostered supercapacitor performance introduces a new realm in the field of smart energy storage applications. Transition metal dichalcogenides (TMDC) with direct band gap are intriguing candidates for developing light...

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