scholarly journals Carbon Nanotubes: High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes (Adv. Mater. 46/2012)

2012 ◽  
Vol 24 (46) ◽  
pp. 6115-6115 ◽  
Author(s):  
Satria Zulkarnaen Bisri ◽  
Jia Gao ◽  
Vladimir Derenskyi ◽  
Widianta Gomulya ◽  
Igor Iezhokin ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Random Network ◽  
Effect Transistor

scholarly journals High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes

2012 ◽  
Vol 24 (46) ◽  
pp. 6147-6152 ◽  
Author(s):  
Satria Zulkarnaen Bisri ◽  
Jia Gao ◽  
Vladimir Derenskyi ◽  
Widianta Gomulya ◽  
Igor Iezhokin ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Random Network ◽  
Effect Transistor

All-Metallic High-Performance Field Effect Transistor Based on Telescoping Carbon Nanotubes: An ab Initio Study

2011 ◽  
Vol 115 (14) ◽  
pp. 6933-6938 ◽  
Author(s):  
Qihang Liu ◽  
Lili Yu ◽  
Hong Li ◽  
Rui Qin ◽  
Zhou Jing ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Ab Initio ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Ab Initio Study ◽  
Effect Transistor

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

High-performance InGaAs junction field-effect transistor with P/Be co-implanted gate

1988 ◽  
Vol 9 (5) ◽  
pp. 205-207 ◽  
Author(s):  
K.-W. Wang ◽  
C.-L. Cheng ◽  
J. Long ◽  
D. Mitcham
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Effect Transistor
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