Infrared Photodetectors Based on CVD-Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity

2012 ◽  
Vol 24 (43) ◽  
pp. 5878-5883 ◽  
Author(s):  
Zhenhua Sun ◽  
Zhike Liu ◽  
Jinhua Li ◽  
Guo-an Tai ◽  
Shu-Ping Lau ◽  
...  
2020 ◽  
Vol 8 (23) ◽  
pp. 7812-7819
Author(s):  
Longfei Mi ◽  
Yajing Chang ◽  
Yan Zhang ◽  
Enze Xu ◽  
Yang Jiang

A hybrid perovskite decorated with PbS-QDs by using a ligand exchange process to fabricate high-performance photodetectors.


2020 ◽  
Author(s):  
Iván Mora-Seró ◽  
Sofia Masi ◽  
David Macias-Pinilla ◽  
Carlos Echeverría-Arrondo ◽  
Juan Ignacio Climente

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Tamara Sloboda ◽  
Sebastian Svanström ◽  
Fredrik O. L. Johansson ◽  
Aneta Andruszkiewicz ◽  
Xiaoliang Zhang ◽  
...  

AbstractTime-resolved photoelectron spectroscopy can give insights into carrier dynamics and offers the possibility of element and site-specific information through the measurements of core levels. In this paper, we demonstrate that this method can access electrons dynamics in PbS quantum dots over a wide time window spanning from pico- to microseconds in a single experiment carried out at the synchrotron facility BESSY II. The method is sensitive to small changes in core level positions. Fast measurements at low pump fluences are enabled by the use of a pump laser at a lower repetition frequency than the repetition frequency of the X-ray pulses used to probe the core level electrons: Through the use of a time-resolved spectrometer, time-dependent analysis of data from all synchrotron pulses is possible. Furthermore, by picosecond control of the pump laser arrival at the sample relative to the X-ray pulses, a time-resolution limited only by the length of the X-ray pulses is achieved. Using this method, we studied the charge dynamics in thin film samples of PbS quantum dots on n-type MgZnO substrates through time-resolved measurements of the Pb 5d core level. We found a time-resolved core level shift, which we could assign to electron injection and charge accumulation at the MgZnO/PbS quantum dots interface. This assignment was confirmed through the measurement of PbS films with different thicknesses. Our results therefore give insight into the magnitude of the photovoltage generated specifically at the MgZnO/PbS interface and into the timescale of charge transport and electron injection, as well as into the timescale of charge recombination at this interface. It is a unique feature of our method that the timescale of both these processes can be accessed in a single experiment and investigated for a specific interface.


2021 ◽  
Vol 546 ◽  
pp. 149086
Author(s):  
Xiangping Pan ◽  
Yanhua Dong ◽  
Ming Jia ◽  
Jianxiang Wen ◽  
Caiyun Su ◽  
...  

2008 ◽  
Vol 20 (14) ◽  
pp. 1240-1242 ◽  
Author(s):  
Chi-Che Tseng ◽  
Shu-Ting Chou ◽  
Yi-Hao Chen ◽  
Cheng-Nan Chen ◽  
Wei-Hsun Lin ◽  
...  

Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.


2021 ◽  
pp. 1-1
Author(s):  
Aigerim Tankimanova ◽  
Chun Hong Kang ◽  
Omar Alkhazragi ◽  
Haodong Tang ◽  
Meiwei Kong ◽  
...  

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