scholarly journals Strain-Balanced Epitaxial Stacks of Quantum Dots and Posts: Strain Balanced Epitaxial Stacks of Quantum Dots and Quantum Posts (Adv. Mater. 44/2011)

2011 ◽  
Vol 23 (44) ◽  
pp. 5116-5116 ◽  
Author(s):  
Diego Alonso-Álvarez ◽  
Jose María Ripalda ◽  
Benito Alén ◽  
Jose María Llorens ◽  
Antonio Rivera ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Posts

Optical Properties of Quantum Dots and Quantum Posts

2007 ◽  
Author(s):  
P. M. Petroff ◽  
H.J. Krenner ◽  
J. He ◽  
C. Pryor ◽  
C. Morris ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Posts

Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts

2011 ◽  
Vol 22 (6) ◽  
pp. 065703 ◽  
Author(s):  
F Iikawa ◽  
V Donchev ◽  
Ts Ivanov ◽  
G O Dias ◽  
L H G Tizei ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Type Ii ◽  
Carrier Distribution ◽  
Quantum Posts

scholarly journals Enhanced Sequential Carrier Capture into Individual Quantum Dots and Quantum Posts Controlled by Surface Acoustic Waves

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3399-3407 ◽  
Author(s):  
Stefan Völk ◽  
Florian J. R. Schülein ◽  
Florian Knall ◽  
Dirk Reuter ◽  
Andreas D. Wieck ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Carrier Capture ◽  
Quantum Posts

scholarly journals Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts

2011 ◽  
Vol 9 (2) ◽  
pp. 407-410 ◽  
Author(s):  
Hubert J. Krenner ◽  
Stefan Völk ◽  
Florian J. R. Schülein ◽  
Florian Knall ◽  
Achim Wixforth ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Carrier Injection ◽  
Self Assembled ◽  
Quantum Posts

scholarly journals Strain Balanced Epitaxial Stacks of Quantum Dots and Quantum Posts

2011 ◽  
Vol 23 (44) ◽  
pp. 5256-5261 ◽  
Author(s):  
Diego Alonso-Álvarez ◽  
Jose María Ripalda ◽  
Benito Alén ◽  
Jose María Llorens ◽  
Antonio Rivera ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Posts

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

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