scholarly journals Full Visible Range Covering InP/ZnS Nanocrystals with High Photometric Performance and Their Application to White Quantum Dot Light-Emitting Diodes

2012 ◽  
Vol 24 (30) ◽  
pp. 4180-4185 ◽  
Author(s):  
Xuyong Yang ◽  
Dewei Zhao ◽  
Kheng Swee Leck ◽  
Swee Tiam Tan ◽  
Yu Xin Tang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Visible Range ◽  
Light Emitting ◽  
Zns Nanocrystals

scholarly journals Yb:MoO3/Ag/MoO3 Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 663
Author(s):  
Chun-Yu Lee ◽  
Yi-Min Chen ◽  
Yao-Zong Deng ◽  
Ya-Pei Kuo ◽  
Peng-Yu Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Thin Metal ◽  
Visible Range ◽  
Driving Voltage ◽  
High Current Efficiency ◽  
Light Emitting ◽  
Indium Zinc Oxide ◽  
Average Transmittance

In this study, we report on the application of a dielectric/ultra-thin metal/dielectric (DMD) multilayer consisting of ytterbium (Yb)-doped molybdenum oxide (MoO3)/silver (Ag)/MoO3 stacked as the transparent cathode in top-emitting green quantum dot light-emitting diodes (QLED). By optimizing the Yb doping ratio, we have highly improved the electron injection ability from 0.01 to 0.35. In addition, the dielectric/ultra-thin metal/dielectric (DMD) cathode also shows a low sheet resistance of only 12.2 Ω/sq, which is superior to the resistance of the commercially-available indium tin oxide (ITO) electrode (~15 Ω/sq). The DMD multilayer exhibits a maximum transmittance of 75% and an average transmittance of 70% over the visible range of 400–700 nm. The optimized DMD-based G-QLED has a smaller current leakage at low driving voltage. The optimized DMD-based G-QLED enhances the current density than that of G-QLED with indium zinc oxide (IZO) as a cathode. The fabricated DMD-based G-QLED shows a low turn-on voltage of 2.2 V, a high current efficiency of 38 cd/A, and external quantum efficiency of 9.8. These findings support the fabricated DMD multilayer as a promising cathode for transparent top-emitting diodes.

ZnSe:Te/ZnSeS/ZnS nanocrystals: an access to cadmium-free pure-blue quantum-dot light-emitting diodes

Nanoscale ◽  
2020 ◽  
Vol 12 (21) ◽  
pp. 11556-11561 ◽  
Author(s):  
Zhen Bao ◽  
Zhen-Feng Jiang ◽  
Qiang Su ◽  
Hsin-Di Chiu ◽  
Heesun Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Blue Emission ◽  
Specific Structure ◽  
Emission Wavelength ◽  
Light Emitting ◽  
Zns Nanocrystals

The emission wavelength of ZnSe/ZnS quantum dots was successfully tuned from the violet (∼420 nm) to pure-blue (∼455 nm) region by doping Te into the ZnSe core. A specific structure QLED fabricated with ZnSe:0.03Te/ZnSeS/ZnS QDs realized pure-blue emission.

scholarly journals Quantum-dot light-emitting diodes utilizing CdSe∕ZnS nanocrystals embedded in TiO2 thin film

2008 ◽  
Vol 93 (19) ◽  
pp. 191116 ◽  
Author(s):  
Seung-Hee Kang ◽  
Ch. Kiran Kumar ◽  
Zonghoon Lee ◽  
Kyung-Hyun Kim ◽  
Chul Huh ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dot ◽  
Tio2 Thin Film ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Zns Nanocrystals

scholarly journals Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes

Nanomaterials ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 154
Author(s):  
Ming-Ru Wen ◽  
Sheng-Hsiung Yang ◽  
Wei-Sheng Chen
Keyword(s):  
Quantum Dot ◽  
Current Efficiency ◽  
Light Emitting Diodes ◽  
Hole Mobility ◽  
Environmental Stability ◽  
Hole Injection ◽  
Visible Range ◽  
Carrier Injection ◽  
High Brightness ◽  
Light Emitting

Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m−2 and a current efficiency of 35.1 cd A−1 from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.

Mechanisms of operation in quantum-dot light-emitting diodes

2019 ◽  
pp. 947
Author(s):  
Shoichi sano ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Hiroyoshi Naito
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals On the degradation mechanisms of quantum-dot light-emitting diodes

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Song Chen ◽  
Weiran Cao ◽  
Taili Liu ◽  
Sai-Wing Tsang ◽  
Yixing Yang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Degradation Mechanisms ◽  
Light Emitting
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