Efficient Poling of Electro-Optic Polymers in Thin Films and Silicon Slot Waveguides by Detachable Pyroelectric Crystals

2011 ◽  
Vol 24 (10) ◽  
pp. OP42-OP47 ◽  
Author(s):  
Su Huang ◽  
Jingdong Luo ◽  
Hin-Lap Yip ◽  
Ali Ayazi ◽  
Xing-Hua Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Electro Optic ◽  
Pyroelectric Crystals ◽  
Slot Waveguides

Spontaneously poling of electro-optic polymer thin films across a 1.1-mm thick glass substrate by pyroelectric crystals

2014 ◽  
Vol 105 (18) ◽  
pp. 183305 ◽  
Author(s):  
Su Huang ◽  
Jingdong Luo ◽  
Zhian Jin ◽  
Ming Li ◽  
Tae-Dong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Polymer Thin Films ◽  
Electro Optic ◽  
Pyroelectric Crystals ◽  
Thick Glass

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Electrical and electro-optic characterization of nonlinear polymer thin films on silicon substrate

2014 ◽  
Author(s):  
Stefan Prorok ◽  
Marvin Schulz ◽  
Alexander Petrov ◽  
Manfred Eich ◽  
Jingdong Luo ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Polymer Thin Films ◽  
Electro Optic

scholarly journals Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices

2015 ◽  
Vol 7 (24) ◽  
pp. 13350-13359 ◽  
Author(s):  
J. P. George ◽  
P. F. Smet ◽  
J. Botterman ◽  
V. Bliznuk ◽  
W. Woestenborghs ◽  
...  
Keyword(s):  
Thin Films ◽  
Pzt Thin Films ◽  
Nanophotonic Devices ◽  
Electro Optic

Electro-Optic Properties of (100)-Oriented (Pb,La(Zr,Ti)O3 Thin Film

2012 ◽  
Vol 185 ◽  
pp. 60-64
Author(s):  
Min Min Zhu ◽  
Ze Hui Du ◽  
Jan Ma
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Infrared Light ◽  
Single Crystal Substrate ◽  
Light Wavelength ◽  
Prism Coupler ◽  
Electro Optic ◽  
Crystal Substrate ◽  
Tm Model ◽  
Plzt Thin Films

(100)-oriented PLZT ((Pb1-x, Lax) (Zry,Ti1-y)1-x/4O3, x/y=9/65) films of up to ~ 1.23 μm have been developed on LaAlO3single crystal substrate by magnetron sputtering. The as-grown PLZT thin films exhibit high optical transparency in visible and near-infrared light wavelength and high quadratic (Kerr) EO coefficients. Prism coupler measurements reveal that the PLZT thin films possess large refractive index, as high as 2.524 in TE model and 2.481 in TM model. The transparency of >70% in the range of λ= 500-1200 nm, the optic band gap of 3.42 eV and the quadratic electro-optic (EO) coefficient of 3.38 x 10-17(m/V)2have been measured in the films. Due to the large EO coefficient and the micrometric thickness, the as-developed PLZT films have great potential in developing longitudinal-or transverse-type EO devices in electric and optic field

Exotic Doping for Zno Thin Films: Possibility of Monolithic Optical Integrated Circuit

1999 ◽  
Vol 574 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tamaki Shimura ◽  
Toshifumi Wakano ◽  
Atsushi Ashida ◽  
Taichiro Ito
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nonlinear Optic ◽  
Integrated Circuit ◽  
Film Surface ◽  
Zno Thin Films ◽  
Process Window ◽  
Electro Optic ◽  
Film Substrate ◽  
Optical Integrated Circuit

AbstractWe propose the application of ZnO:X (X = Li, Mg, N, In, Al, Mn, Gd, Yb etc.) films for a monolithic Optical Integrated Circuit (OIC). Since ZnO exhibits excellent piezoelectric effect and has also electro-optic and nonlinear optic effects and the thin films are easily obtained, it has been studied as one of the important thin film wave guide materials especially for an acoustooptic device[1]. In terms of electro-optic and nonlinear optic effects, however, LiNbO3 or LiTaO3 is superior to ZnO. The most important issue of thin film waveguide using such ferroelectrics is optical losses at the film/substrate interface and the film surface, because the process window to control the surface morphology is very narrow due to their high deposition temperature. Since ZnO can be grown at extremely low temperature, the roughness at the surface and the interface is expected to be minimized. This is the absolute requirement especially for waveguide using a blue or ultraviolet laser. Recently, lasing at the wavelength of ultraviolet, ferroelectric and antiferromagnetic behaviors of ZnO doped with various exotic elements (exotic doping) have been reported. This paper discusses the OIC application of ZnO thin films doped with exotic elements.

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

Terahertz electro-optic properties of PbZr0.52Ti0.48O3 and BaTiO3 ferroelectric thin films

2014 ◽  
Vol 105 (11) ◽  
pp. 112903 ◽  
Author(s):  
Lei Chen ◽  
Yuan Zhang ◽  
Quan Guo ◽  
Dongwen Zhang ◽  
Xiangli Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Electro Optic
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