Electrical Characterization of Unipolar Organic Resistive Memory Devices Scaled Down by a Direct Metal-Transfer Method

2011 ◽  
Vol 23 (18) ◽  
pp. 2104-2107 ◽  
Author(s):  
Jin Ju Kim ◽  
Byungjin Cho ◽  
Ki Seok Kim ◽  
Takhee Lee ◽  
Gun Young Jung
Keyword(s):  
Electrical Characterization ◽  
Metal Transfer ◽  
Memory Devices ◽  
Resistive Memory ◽  
Transfer Method

Electrical Characterization of Mos Memory Devices with Self-Assembled Tungsten Nano-Dots Dispersed in Silicon Nitride

2019 ◽  
Vol 18 (1) ◽  
pp. 33-37
Author(s):  
Yanli Pei ◽  
Chengkuan Yin ◽  
Masahiko Nishijima ◽  
Toshiya Kojima ◽  
Hiroshi Noriha ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electrical Characterization ◽  
Memory Devices ◽  
Self Assembled

Synthesis and Electrical Characterization of a MOS Memory Containing Pt Nanoparticles Deposited at a SiO2/ HfO2 Interface

2004 ◽  
Vol 830 ◽  
Author(s):  
Ch. Sargentis ◽  
K. Giannakopoulos ◽  
A. Travlos ◽  
D. Tsamakis
Keyword(s):  
High Frequency ◽  
Semiconductor Nanocrystals ◽  
Electrical Characterization ◽  
Pt Nanoparticles ◽  
Memory Device ◽  
Memory Devices ◽  
High K ◽  
High K Dielectric ◽  
Mos Device

ABSTRACTMOS memory devices containing semiconductor nanocrystals have drawn considerable attention recently, due to their advantages when compared to the conventional memories. Only little work has been done on memory devices containing metal nanoparticles.We describe the fabrication of a novel MOS device with embedded Pt nanoparticles in the HfO2 / SiO2 interface of a MOS device. Using as control oxide, a high-k dielectric, our device has a great degree of scalability. The fabricated nanoparticles are very small (about 5 nm) and have high density. High frequency C-V measurements demonstrate that this device operates as a memory device.

scholarly journals Memory Devices: Structural and Electrical Characterization of a Block Copolymer-Based Unipolar Nonvolatile Memory Device (Adv. Mater. 3/2012)

2012 ◽  
Vol 24 (3) ◽  
pp. 322-322
Author(s):  
Nam-Goo Kang ◽  
Byungjin Cho ◽  
Beom-Goo Kang ◽  
Sunghoon Song ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Nonvolatile Memory ◽  
Electrical Characterization ◽  
Memory Device ◽  
Memory Devices ◽  
Nonvolatile Memory Device

Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layer

2007 ◽  
Vol 601 (13) ◽  
pp. 2859-2863 ◽  
Author(s):  
Ch. Sargentis ◽  
K. Giannakopoulos ◽  
A. Travlos ◽  
D. Tsamakis
Keyword(s):  
Oxide Layer ◽  
Metallic Nanoparticles ◽  
Electrical Characterization ◽  
Memory Devices ◽  
High K
Sign in / Sign up

Export Citation Format

Share Document