Three-Dimensional Integration of Organic Resistive Memory Devices

2010 ◽  
Vol 22 (44) ◽  
pp. 5048-5052 ◽  
Author(s):  
Sunghoon Song ◽  
Byungjin Cho ◽  
Tae-Wook Kim ◽  
Yongsung Ji ◽  
Minseok Jo ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Memory Devices ◽  
Resistive Memory

Organic Memory: Three-Dimensional Integration of Organic Resistive Memory Devices (Adv. Mater. 44/2010)

2010 ◽  
Vol 22 (44) ◽  
pp. 4915-4915
Author(s):  
Sunghoon Song ◽  
Byungjin Cho ◽  
Tae-Wook Kim ◽  
Yongsung Ji ◽  
Minseok Jo ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Memory Devices ◽  
Resistive Memory ◽  
Organic Memory

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

Nano Letters ◽  
2014 ◽  
Vol 14 (5) ◽  
pp. 2401-2406 ◽  
Author(s):  
Umberto Celano ◽  
Ludovic Goux ◽  
Attilio Belmonte ◽  
Karl Opsomer ◽  
Alexis Franquet ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conductive Filament

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

2013 ◽  
Vol 34 (2) ◽  
pp. 244-246 ◽  
Author(s):  
Jung-Kyu Lee ◽  
Sunghun Jung ◽  
Byeong-In Choe ◽  
Jinwon Park ◽  
Sung-Woong Chung ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Flicker Noise ◽  
Transition Metal Oxide ◽  
Memory Devices ◽  
Resistive Memory ◽  
Layered Transition Metal

Integrating Multiple Resistive Memory Devices on a Single Carbon Nanotube

2013 ◽  
Vol 23 (45) ◽  
pp. 5631-5637 ◽  
Author(s):  
David Brunel ◽  
Costin Anghel ◽  
Do-Yoon Kim ◽  
Saïd Tahir ◽  
Stéphane Lenfant ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Memory Devices ◽  
Resistive Memory

Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory

2011 ◽  
Vol 1337 ◽  
Author(s):  
B.D. Briggs ◽  
S.M. Bishop ◽  
K.D. Leedy ◽  
B. Butcher ◽  
R. L. Moore ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Copper Concentration ◽  
Atomic Layer ◽  
Metal Electrode ◽  
Pulse Mode ◽  
Switching Behavior ◽  
Material Structure ◽  
Memory Devices ◽  
Resistive Memory

ABSTRACTHafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfOx active layers in these devices were deposited by atomic layer deposition at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O2 plasma as the reactant. Depth profiles of the HfOx by x-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfOx film. This phenomenon has not been previously reported in resistive switching literature and therefore may have gone unnoticed by other investigators. The MIM structures fabricated from the HfOx exhibited non-polar behavior, independent of the top metal electrode (Ni, Pt, Al, Au). These results are analogous to the non-polar switching behavior observed by Yang et al. [2] for intentionally Cu-doped HfOx resistive memory devices. The distinguishing characteristic of the material structure produced in this research is that the copper concentration increases to 60 % in a conducting surface copper oxide layer ~20 nm thick. Lastly, the results from both sweep- and pulse-mode current-voltage measurements are presented and preliminary work on fabricating sub-100 nm devices is summarized.

scholarly journals Influence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices

2010 ◽  
Vol 518 (12) ◽  
pp. 3293-3298 ◽  
Author(s):  
S. Puthen Thermadam ◽  
S.K. Bhagat ◽  
T.L. Alford ◽  
Y. Sakaguchi ◽  
M.N. Kozicki ◽  
...  
Keyword(s):  
Memory Devices ◽  
Resistive Memory

NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment

2019 ◽  
Vol 480 ◽  
pp. 57-62 ◽  
Author(s):  
Xin Kang ◽  
Jiajun Guo ◽  
Yingjie Gao ◽  
Shuxia Ren ◽  
Wei Chen ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Memory Devices ◽  
Resistive Memory ◽  
Pre Treatment

Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin
Keyword(s):  
Metal Oxide ◽  
Diffusion Processes ◽  
Memory Device ◽  
Device Fabrication ◽  
Oxide Material ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Metal Metal ◽  
Metal Oxide Layer

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

Well-defined star-shaped donor–acceptor conjugated molecules for organic resistive memory devices

2015 ◽  
Vol 51 (75) ◽  
pp. 14179-14182 ◽  
Author(s):  
Hung-Chin Wu ◽  
Jicheng Zhang ◽  
Zhishan Bo ◽  
Wen-Chang Chen
Keyword(s):  
Charge Storage ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conjugated Molecules ◽  
Storage Materials ◽  
End Groups ◽  
Donor Acceptor ◽  
Solution Processable ◽  
First Time

Solution processable star-shaped donor–acceptor conjugated molecules are explored for the first time as charge storage materials for resistor-type memory devices with a triphenylamine (donor) core, and three 1.8-naphthalimide (acceptors) end-groups.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

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