Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes

2010 ◽  
Vol 22 (38) ◽  
pp. 4284-4287 ◽  
Author(s):  
Ya-Qing Bie ◽  
Zhi-Min Liao ◽  
Peng-Wei Wang ◽  
Yang-Bo Zhou ◽  
Xiao-Bing Han ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Uv Light ◽  
Photovoltaic Devices ◽  
Zno Nanowire ◽  
Light Emitting ◽  
P Type

High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes

2019 ◽  
Vol 239 ◽  
pp. 45-47 ◽  
Author(s):  
Haixia Li ◽  
Wanqiu Zhao ◽  
Yang Liu ◽  
Yi Liang ◽  
Liang Ma ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Nanowire Array ◽  
Zno Nanowire ◽  
Light Emitting ◽  
High Level ◽  
P Type ◽  
White Light Emitting Diodes ◽  
Gan Film

Optical Properties of AlN/AlGa(In)N Short Period Superlattices – Deep UV Light Emitting Diodes

2003 ◽  
Vol 798 ◽  
Author(s):  
M. Holtz ◽  
I. Ahmad ◽  
V. V. Kuryatkov ◽  
B. A. Borisov ◽  
G. D. Kipshidze ◽  
...  
Keyword(s):  
Optical Properties ◽  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Effusion Cell ◽  
Light Emitting ◽  
Short Period ◽  
Short Period Superlattices ◽  
Deep Uv ◽  
P Type

ABSTRACTWe report optical properties of deep UV light emitting diodes (LEDs). Devices are based on short period superlattices of AlN/AlxGa1-x(In)N (x ∼ 0.08) grown by gas source molecular beam epitaxy with ammonia. Structures consist of a 50-nm thick AlN nucleation/buffer layer deposited on sapphire. This is followed by a 1-micron thick Si-doped buffer layer of AlGaN or AlN/AlGa(In)N designed to be transparent for wavelengths longer than 240 nm. The design thickness of the superlattice well layers is systematically varied from 0.50 nm to 1.25 nm and the thickness of the barrier is varied from 0.75 nm to 2.00 nm. The n- and p-type SPSLs were doped with Si derived from silane and Mg evaporated from an effusion cell, respectively. We investigate device structures as well as superlattices which are nominally undoped, p-type, and n-type. Optical properties are investigated using reflectance, cathodoluminescence, and, in the case of LEDs, using electroluminescence. By controlling the properties of the superlattice, we obtain optical gaps ranging from 4.5 eV (276 nm) and 5.3 eV (234 nm). A systematic shift between the optical gap and the CL peak emission energy is discussed. Electrical properties are studied using I-V, C-V, and Hall effect. LEDs based on these superlattices and operating in the range of 260 to 280 nm exhibit turn-on voltages in the range of 4 to 6 V and support dc current densities in excess of 500 A/cm2 at room temperature. We present results on the electrical and optical properties of our LEDs designed using these studies.

Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

2005 ◽  
Vol 20 (9) ◽  
pp. 921-924 ◽  
Author(s):  
Keun-Yong Ban ◽  
Hyun-Gi Hong ◽  
Do Young Noh ◽  
Tae-Yeon Seong ◽  
June-O Song ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Indium Zinc Oxide ◽  
P Type

Oxide nanowire arrays for light-emitting diodes and piezoelectric energy harvesters

2011 ◽  
Vol 83 (12) ◽  
pp. 2171-2198 ◽  
Author(s):  
Sheng Xu ◽  
Zhong Lin Wang
Keyword(s):  
Light Emitting Diodes ◽  
Uv Light ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Light Emitting ◽  
Energy Harvesters ◽  
Piezoelectric Energy ◽  
Polycrystalline Thin Films ◽  
Wet Chemical ◽  
Self Powered

As an outstanding member in the oxide nanowire family, ZnO nanowire is widely studied for its optical, semiconductive, and piezoelectric properties. PbZrxTi1–xO3 (PZT), usually in the form of polycrystalline thin films, is known for its high piezoelectric coefficient and is an ideal material as actuator. In this review, we first briefly introduce the rational growth of ZnO and PZT nanowire arrays by seedless wet chemical methods. Utilizing the ordered ZnO nanowires grown on p-type substrates, we next present an array of single ZnO nanowire-based blue/near-UV light-emitting diodes (LEDs), including their fabrication process, electroluminescence (EL) spectra, and external quantum efficiency. Finally, we discuss the piezoelectric ZnO and PZT nanowire-enabled three-dimensionally integrated direct- and alternating-current nanogenerators, and their primary roles in self-powered nanosystems and for powering personal microelectronics.

Performance of vertical type deep UV light-emitting diodes depending on the Ga-face n-contact hole density

2021 ◽  
Vol 118 (23) ◽  
pp. 231102
Author(s):  
Youn Joon Sung ◽  
Dong-Woo Kim ◽  
Geun Young Yeom ◽  
Kyu Sang Kim
Keyword(s):  
Light Emitting Diodes ◽  
Uv Light ◽  
Hole Density ◽  
Light Emitting ◽  
Deep Uv

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates

2007 ◽  
Vol 46 (No. 23) ◽  
pp. L537-L539 ◽  
Author(s):  
Vinod Adivarahan ◽  
Qhalid Fareed ◽  
Surendra Srivastava ◽  
Thomas Katona ◽  
Mikhail Gaevski ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Organic Hydride ◽  
Metal Organic ◽  
Deep Uv
Sign in / Sign up

Export Citation Format

Share Document