Silicon Pillars: Ultrahigh-Crystalline-Quality Silicon Pillars Formed by Millimeter-Wave Annealing of Amorphous Silicon on Glass (Adv. Mater. 29/2009)

2009 ◽  
Vol 21 (29) ◽  
pp. NA-NA
Author(s):  
Fude Liu ◽  
Kim M. Jones ◽  
Yueqin Xu ◽  
William Nemeth ◽  
John Lohr ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Millimeter Wave ◽  
Crystalline Quality ◽  
Silicon Pillars

Ultrahigh-Crystalline-Quality Silicon Pillars Formed by Millimeter-Wave Annealing of Amorphous Silicon on Glass

2009 ◽  
Vol 21 (29) ◽  
pp. 3002-3006 ◽  
Author(s):  
Fude Liu ◽  
Kim M. Jones ◽  
Yueqin Xu ◽  
William Nemeth ◽  
John Lohr ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Millimeter Wave ◽  
Crystalline Quality ◽  
Silicon Pillars

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

Thin Film Inspection with Millimeter-Wave Reflectometer

1995 ◽  
Vol 7 (1) ◽  
pp. 89-100
Author(s):  
H. C. Han ◽  
E. S. Mansueto
Keyword(s):  
Thin Film ◽  
Millimeter Wave

Machine learning reveals the complexity of dense amorphous silicon

Nature ◽  
2021 ◽  
Vol 589 (7840) ◽  
pp. 22-23
Author(s):  
Paul F. McMillan
Keyword(s):  
Machine Learning ◽  
Amorphous Silicon

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

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