scholarly journals Nanostructured Electrodes: The Role of Surface and Interface Energy on Phase Stability of Nanosized Insertion Compounds (Adv. Mater. 25-26/2009)

2009 ◽  
Vol 21 (25-26) ◽  
Author(s):  
Marnix Wagemaker ◽  
Fokko M. Mulder ◽  
Anton Van der Ven
Keyword(s):  
Phase Stability ◽  
Interface Energy ◽  
Nanostructured Electrodes ◽  
Surface And Interface ◽  
Insertion Compounds

scholarly journals The Role of Surface and Interface Energy on Phase Stability of Nanosized Insertion Compounds

2009 ◽  
Vol 21 (25-26) ◽  
pp. 2703-2709 ◽  
Author(s):  
Marnix Wagemaker ◽  
Fokko M. Mulder ◽  
Anton Van der Ven
Keyword(s):  
Phase Stability ◽  
Interface Energy ◽  
Surface And Interface ◽  
Insertion Compounds

scholarly journals The Role of Sodium in Stabilizing Tin-Lead (Sn-Pb) Alloyed Perovskite Quantum Dots

2021 ◽  
Author(s):  
Junke Jiang ◽  
Feng Liu ◽  
Qing Shen ◽  
Shuxia Tao
Keyword(s):  
Quantum Dots ◽  
Phase Stability ◽  
Band Gaps ◽  
Great Promise ◽  
Narrow Bandgap ◽  
Perovskite Quantum Dots ◽  
Optoelectronic Applications

Narrow-bandgap CsSnxPb1-xI3 perovskite quantum dots (QDs) show great promise for optoelectronic applications owing to their reduced use of toxic Pb, improved phase stability, and tunable band gaps in the visible...

Sign reversal of anomalous Hall effect derived from the transformation of scattering effect in cluster-assembled Ni0.8Fe0.2 nanostructural films

Nanoscale ◽  
2021 ◽  
Author(s):  
Ning Jiang ◽  
Bo Yang ◽  
Yulong Bai ◽  
Yaoxiang Jiang ◽  
Shifeng Zhao
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Sign Reversal ◽  
Surface And Interface ◽  
Scattering Effect ◽  
Single Substance ◽  
Interface Scattering ◽  
Hall Effects

Both surface and interface scattering induced a sign reversal of anomalous Hall effects (AHE) in a few heterostructures. The sign reversal exiting in a single-substance can clarify the role of...

Interface Energy-driven Indium Whisker Growth on Ceramic Substrates 

2021 ◽  
Author(s):  
Shuai Li ◽  
Yushuang Liu ◽  
Peigen Zhang ◽  
Yan Zhang ◽  
Chengjie Lu ◽  
...  
Keyword(s):  
Whisker Growth ◽  
Interface Energy ◽  
Mitigation Strategy ◽  
Max Phase ◽  
Number Density ◽  
Ceramic Substrates ◽  
Liquid Indium ◽  
Reliability Of Electronics

Abstract The mechanism behind spontaneous growth of metal whiskers is essential to develop lead-free whisker mitigation strategy for the sake of long-term reliability of electronics, and has been sought for several decades. However, a consensus about it still lacks, and a host of factors influencing the phenomenon have been investigated, but the role of interface energy has not been paid adequate attention. In this study, the whisker growth propensities of ball-milled Ti2InC/In and non-MAX phase TiC/In and SiC/In are comparatively studied in the terms of the wettability, thermal behavior and crystal structures. The wetting angles of indium with Ti2InC, TiC, and SiC (144.4°, 155.7°, and 142.2°, respectively) are large and quite close, indicating the poor wettability between liquid indium and the three ceramics. The thermal behaviors of all the three systems have obvious changes after ball milling. The number density of indium whiskers on ball-milled Ti2InC are significantly greater than those on the TiC and SiC substrates, which is explained based on interface energy and the crystal structure difference of the ceramic substrates.

Role of substrate interface energy in the synthesis of high quality uniform layered ReS2

2019 ◽  
Vol 493 ◽  
pp. 1215-1223 ◽  
Author(s):  
Muhammad Hafeez ◽  
Shafiq ur Rehman ◽  
Awais Siddique Saleemi ◽  
Muhammad Saeed ◽  
Ling Zhu
Keyword(s):  
Interface Energy ◽  
High Quality ◽  
Substrate Interface

Phase Stability and Role of Ternary Additions on Electronic and Mechanical Properties of Aluminum Intermetallics

1990 ◽  
Vol 213 ◽  
Author(s):  
A.J. Freeman ◽  
T. Hong ◽  
W. Lin ◽  
Jian-Hua Xu
Keyword(s):  
Mechanical Properties ◽  
Phase Stability ◽  
First Principles ◽  
Local Density ◽  
Electronic Charge ◽  
Intermetallic Alloys ◽  
Phase Boundaries ◽  
Bonding Properties ◽  
Ternary Additions

ABSTRACTFirst principles total energy local density method have addressed the problems of (i) bonding, cohesion and phase stability and (ii) the role of ternary additions, anti-phase boundaries (APB's) and other faults in determining the structural, electronic and mechanical properties of aluminum intermetallic alloys. A key goal has been to attempt to understand, at the electronic level, fundamental quantities that may be related to the crucial brittleness vs. ductility issue in high temperature Ni and Ti and other aluminides. Other contrasts between observed ductility properties of related systems (e.g., NiAl and RuAl) are related to their differing electronic and bonding properties, particularly the nature of p-d hybridization and the directional properties of their electronic charge distrubutions - especially for states near the Fermi energy.

The Role of Phase Stability in Ductile, Ordered B2 Intermetallics

2006 ◽  
Vol 980 ◽  
Author(s):  
James R. Morris ◽  
Yiying Ye ◽  
Maja Krcmar ◽  
Chong Long Fu
Keyword(s):  
Phase Stability ◽  
First Principles ◽  
Tensile Ductility ◽  
Stacking Faults ◽  
Low Energy ◽  
First Principles Calculations ◽  
Phase Competition ◽  
Transformation Pathway ◽  
Shape Memory Materials

AbstractWe discuss the underlying atomistic mechanism for experimentally observed large tensile ductility in various strongly ordered B2 intermetallic compounds. First-principles calculations demonstrate that all of the compounds exhibit little energy differences between the B2, B27 and B33 phases. These calculations relate observations of ductility in YAg, YCu and ZrCo to shape-memory materials including NiTi. One transformation pathway between the B2 and B33 phases establishes a connection between this phase competition, and stacking faults on the {011}B2 plane. The low energy of such a stacking fault will lead to splitting of the b=<100> dislocations into b/2 partials, observed in ZrCo, TiCo, and in the B19' phase of NiTi. Calculations demonstrate that this pathway is competitive with the traditional pathway for NiTi.

FREE-ELECTRON LASER SPECTROSCOPY OF SURFACES AND INTERFACES

1995 ◽  
Vol 02 (04) ◽  
pp. 501-512 ◽  
Author(s):  
N.H. TOLK ◽  
J.T. MCKINLEY ◽  
G. MARGARITONDO
Keyword(s):  
Synchrotron Radiation ◽  
Free Electron ◽  
Free Electron Laser ◽  
Interface Energy ◽  
Free Electron Lasers ◽  
Semiconductor Interface ◽  
X Ray ◽  
Surface And Interface ◽  
Surfaces And Interfaces ◽  
Radiation Sources

Synchrotron-radiation sources have become, since the late 1960’s, one of the fundamental experimental tools for surface and interface research. Only recently, however, a related type of photon sources - the free-electron lasers (FELs) — has begun to make important contributions to this field. For example, FELs have been used to reach unprecedented levels of accuracy and reliability in measuring semiconductor interface energy barriers. We review some of the present and proposed experiments that are made possible by the unmatched brightness and broad tunability of infrared FELs. Practical examples discussed in the review are supplied by our own programs at the Vanderbilt Free-Electron Laser. We also briefly analyze the possible future development of FELs and of their applications to surface and interface research, in particular, the possibility of x-ray FELs.

The surprising role of magnetism on the phase stability of Fe (Ferro)

Calphad ◽  
2009 ◽  
Vol 33 (1) ◽  
pp. 3-7 ◽  
Author(s):  
Thaddeus B. Massalski ◽  
David E. Laughlin
Keyword(s):  
Phase Stability

INTRINSIC SURFACE AND INTERFACE STRESS OF LOW-DIMENSIONAL CRYSTALS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 64-70 ◽  
Author(s):  
Q. JIANG ◽  
D. S. ZHAO ◽  
M. ZHAO
Keyword(s):  
Theoretical Consideration ◽  
Size Dependence ◽  
Interface Energy ◽  
Liquid Interface ◽  
Interface Stress ◽  
Surface And Interface ◽  
Low Dimensional ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
Theoretical Results

Based on the theoretical consideration on the size-dependence of solid-liquid interface energy, a model for the intrinsic interface stress of metallic, ionic and semiconductor nanosolid has been developed, free from adjustable parameters. Modeling predictions agree well with experimental observations and other theoretical results.

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