Carbon-Based Field-Effect Transistors for Nanoelectronics

Marko Burghard; Hagen Klauk; Klaus Kern

doi:10.1002/adma.200803582

Carbon-Based Field-Effect Transistors for Nanoelectronics

Advanced Materials ◽

10.1002/adma.200803582 ◽

2009 ◽

Vol 21 (25-26) ◽

pp. 2586-2600 ◽

Cited By ~ 205

Author(s):

Marko Burghard ◽

Hagen Klauk ◽

Klaus Kern

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Carbon Based

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Performance analysis of carbon-based tunnel field-effect transistors for high frequency and ultralow power applications

Applied Physics Letters ◽

10.1063/1.3524826 ◽

2010 ◽

Vol 97 (23) ◽

pp. 233504 ◽

Cited By ~ 4

Author(s):

Youngki Yoon ◽

Sung Hwan Kim ◽

Sayeef Salahuddin

Keyword(s):

Performance Analysis ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Ultralow Power ◽

Carbon Based

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All-carbon-based field effect transistors fabricated by aerosol jet printing on flexible substrates

Journal of Micromechanics and Microengineering ◽

10.1088/0960-1317/23/6/065027 ◽

2013 ◽

Vol 23 (6) ◽

pp. 065027 ◽

Cited By ~ 19

Author(s):

Rui Liu ◽

Fangping Shen ◽

Haiyan Ding ◽

Jian Lin ◽

Wen Gu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Flexible Substrates ◽

Jet Printing ◽

Aerosol Jet Printing ◽

Carbon Based

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Ultimate device scaling: Intrinsic performance comparisons of carbon-based, InGaAs, and Si field-effect transistors for 5 nm gate length

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131531 ◽

2011 ◽

Cited By ~ 46

Author(s):

Mathieu Luisier ◽

Mark Lundstrom ◽

Dimitri A. Antoniadis ◽

Jeffrey Bokor

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Length ◽

Device Scaling ◽

Carbon Based ◽

Performance Comparisons

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2 Carbon-Based Field-Effect Transistors

Handbook of Innovative Nanomaterials ◽

10.1201/b12707-41 ◽

2012 ◽

pp. 761-786

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Carbon Based

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Reduced graphene oxide produced by rapid-heating reduction and its use in carbon-based field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4739486 ◽

2012 ◽

Vol 112 (3) ◽

pp. 033701 ◽

Cited By ~ 3

Author(s):

In-yeal Lee ◽

Jianwei Wang ◽

Gil-Ho Kim ◽

Jin-Hong Park ◽

E. S. Kannan ◽

...

Keyword(s):

Graphene Oxide ◽

Reduced Graphene Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Rapid Heating ◽

Reduced Graphene ◽

Carbon Based

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Field-Effect Transistors Based on Organic and Carbon-Based Materials for Chemical and Biological Sensors

Current Organic Chemistry ◽

10.2174/1385272819666150318222230 ◽

2015 ◽

Vol 19 (12) ◽

pp. 1176-1190 ◽

Cited By ~ 3

Author(s):

Joonwon Bae ◽

Il T. Kim ◽

Jaehyun Hur

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Biological Sensors ◽

Carbon Based ◽

Chemical And Biological Sensors

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APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981490 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-423-C4-432 ◽

Cited By ~ 2

Author(s):

P. G. Le Comber ◽

A. J. Snell ◽

K. D. Mackenzie ◽

W. E. Spear

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Liquid Crystal Displays ◽

Logic Circuits ◽

Integrated Logic

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Construction of two-dimensional regression models of current-voltage characteristics of the output current of field-effect transistors using the information system PLExp

Izmeritel`naya Tekhnika ◽

10.32446/0368-1025it.2019-11-49-55 ◽

2019 ◽

pp. 49-55

Author(s):

N.Y. Baturina ◽

I.V. Kalienko

Keyword(s):

Information System ◽

Regression Models ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Output Current ◽

Current Voltage ◽

Current Voltage Characteristics

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Ambipolar Characteristics of Solution Processed Bilayer Field Effect Transistors based on Poly(3-hexylthiophene) and fullerene derivatives

10.1557/proc-1115-h05-43 ◽

2008 ◽

Author(s):

Takeomi Morita ◽

Syuichi Nagamatsu ◽

Vipul Singh ◽

Shinya Oku ◽

Wataru Takashima ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Solution Processed ◽

Fullerene Derivatives

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Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

10.1557/proc-1115-h05-10 ◽

2008 ◽

Author(s):

Takafumi Uemura ◽

Masakazu Yamagishi ◽

Yukihiro Tominari ◽

Jun Takeya

Keyword(s):

Single Crystal ◽

Crystal Field ◽

Field Effect ◽

Field Effect Transistors ◽

Crystal Field Effect ◽

Organic Single Crystal

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