Flexible Inorganic/Organic Hybrid Thin-Film Transistors Using All-Transparent Component Materials

2007 ◽  
Vol 19 (20) ◽  
pp. 3252-3256 ◽  
Author(s):  
L. Wang ◽  
M.-H. Yoon ◽  
A. Facchetti ◽  
T J. Marks
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hybrid Thin Film ◽  
Organic Hybrid

scholarly journals Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

2011 ◽  
Vol 98 (10) ◽  
pp. 103515 ◽  
Author(s):  
Shinhyuk Yang ◽  
Chi-Sun Hwang ◽  
Jeong-Ik Lee ◽  
Sung-Min Yoon ◽  
Min-Ki Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hybrid Thin Film ◽  
Organic Hybrid ◽  
Transparent Oxide

Towards solution-processed ambipolar hybrid thin-film transistors based on ZnO nanoparticles and P3HT polymer

2013 ◽  
Vol 58 ◽  
pp. 144-153 ◽  
Author(s):  
Abdou Karim Diallo ◽  
Meriem Gaceur ◽  
Nicolas Berton ◽  
Olivier Margeat ◽  
Jörg Ackermann ◽  
...  
Keyword(s):  
Thin Film ◽  
Zno Nanoparticles ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Hybrid Thin Film

High-performance transparent inorganic–organic hybrid thin-film n-type transistors

2006 ◽  
Vol 5 (11) ◽  
pp. 893-900 ◽  
Author(s):  
Lian Wang ◽  
Myung-Han Yoon ◽  
Gang Lu ◽  
Yu Yang ◽  
Antonio Facchetti ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Hybrid Thin Film ◽  
Organic Hybrid

High‐Performance Organic‐Inorganic Hybrid Thin‐Film Transistors with Interesting Synaptic Behaviors

2019 ◽  
Vol 216 (18) ◽  
pp. 1900344 ◽  
Author(s):  
Huichao Zhu ◽  
Hongjian Mu ◽  
Zhaoyun Cai ◽  
Xuefeng Chu ◽  
Xiaotian Yang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid

Threshold voltage manipulation of ZnO-graphene oxide hybrid thin film transistors via Au nanoparticles doping

2D Materials ◽  
2015 ◽  
Vol 2 (4) ◽  
pp. 044007 ◽  
Author(s):  
Wooseok Song ◽  
Ki Woong Kim ◽  
Seong Jun Kim ◽  
Bok Ki Min ◽  
Yi Rang Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Au Nanoparticles ◽  
Hybrid Thin Film

Laser dehydrogenation/crystallization of plasma‐enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistors

1994 ◽  
Vol 64 (9) ◽  
pp. 1132-1134 ◽  
Author(s):  
P. Mei ◽  
J. B. Boyce ◽  
M. Hack ◽  
R. A. Lujan ◽  
R. I. Johnson ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Hybrid Thin Film ◽  
Chemical Vapor Deposited

Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures

2015 ◽  
Vol 15 (10) ◽  
pp. 7526-7530 ◽  
Author(s):  
Soon-Won Jung ◽  
Jae Bon Koo ◽  
Chan Woo Park ◽  
Bock Soon Na ◽  
Ji-Young Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Vinylidene Fluoride ◽  
Channel Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Poly Vinylidene Fluoride

In this study, stretchable organic–inorganic hybrid thin-film transistors (TFTs) are fabricated on a polyimide (PI) stiff-island/elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and oxide semiconductor In-Ga-Zn-O as the gate dielectric and semiconducting layer, respectively. Carrier mobility, Ion/Ioff ratio, and subthreshold swing (SS) values of 6.1 cm2 V−1 s−1, 107, and 0.2 V/decade, respectively, were achieved. For the hybrid TFTs, the endurable maximum strain without degradation of electrical properties was approximately 49%. These results correspond to those obtained in the first study on fabrication of stretchable hybrid-type TFTs on elastomer substrate using an organic gate insulator and oxide semiconducting active channel structure, thus indicating the feasibility of a promising device for stretchable electronic systems.

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