scholarly journals High-Mobility Ambipolar Transport in Organic Light-Emitting Transistors

2006 ◽  
Vol 18 (11) ◽  
pp. 1416-1420 ◽  
Author(s):  
F. Dinelli ◽  
R. Capelli ◽  
M. A. Loi ◽  
M. Murgia ◽  
M. Muccini ◽  
...  
Keyword(s):  
High Mobility ◽  
Light Emitting ◽  
Organic Light ◽  
Light Emitting Transistors ◽  
Ambipolar Transport

n-Type organic light-emitting transistors with high mobility and improved air stability

2018 ◽  
Vol 6 (3) ◽  
pp. 535-540 ◽  
Author(s):  
Lanchao Ma ◽  
Dashan Qin ◽  
Yunqi Liu ◽  
Xiaowei Zhan
Keyword(s):  
High Mobility ◽  
Perylene Diimide ◽  
Light Emitting ◽  
Organic Light ◽  
Light Emitting Transistors ◽  
A Charge

The first example of n-type organic light-emitting transistors operated in air was demonstrated using perylene diimide as a charge-transporting and light-emitting layer.

Organic Light‐Emitting Transistors Entering a New Development Stage

2021 ◽  
pp. 2007149
Author(s):  
Zhengsheng Qin ◽  
Haikuo Gao ◽  
Huanli Dong ◽  
Wenping Hu
Keyword(s):  
Development Stage ◽  
Light Emitting ◽  
Organic Light ◽  
New Development ◽  
Light Emitting Transistors

scholarly journals High efficiency blue organic light-emitting diodes with below-bandgap electroluminescence

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Maria Vasilopoulou ◽  
Abd. Rashid bin Mohd Yusoff ◽  
Matyas Daboczi ◽  
Julio Conforto ◽  
Anderson Emanuel Ximim Gavim ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
High Mobility ◽  
Organic Light Emitting Diodes ◽  
Triplet Energy ◽  
Material Interface ◽  
Light Emitting ◽  
Thermally Activated ◽  
Organic Light ◽  
Hole Transporting

AbstractBlue organic light-emitting diodes require high triplet interlayer materials, which induce large energetic barriers at the interfaces resulting in high device voltages and reduced efficiencies. Here, we alleviate this issue by designing a low triplet energy hole transporting interlayer with high mobility, combined with an interface exciplex that confines excitons at the emissive layer/electron transporting material interface. As a result, blue thermally activated delay fluorescent organic light-emitting diodes with a below-bandgap turn-on voltage of 2.5 V and an external quantum efficiency (EQE) of 41.2% were successfully fabricated. These devices also showed suppressed efficiency roll-off maintaining an EQE of 34.8% at 1000 cd m−2. Our approach paves the way for further progress through exploring alternative device engineering approaches instead of only focusing on the demanding synthesis of organic compounds with complex structures.

scholarly journals Synaptic Plasticity Powering Long‐Afterglow Organic Light‐Emitting Transistors

2021 ◽  
pp. 2103369
Author(s):  
Yusheng Chen ◽  
Hanlin Wang ◽  
Yifan Yao ◽  
Ye Wang ◽  
Chun Ma ◽  
...  
Keyword(s):  
Synaptic Plasticity ◽  
Light Emitting ◽  
Long Afterglow ◽  
Organic Light ◽  
Light Emitting Transistors

Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations

Small ◽  
2016 ◽  
Vol 12 (10) ◽  
pp. 1252-1294 ◽  
Author(s):  
Congcong Zhang ◽  
Penglei Chen ◽  
Wenping Hu
Keyword(s):  
Light Emitting ◽  
Organic Light ◽  
Light Emitting Transistors

Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) with Directly Deposited Silver Nanowires Intermediate Source Electrode

2019 ◽  
Vol 19 (11) ◽  
pp. 6995-7003 ◽  
Author(s):  
Mohd Arif Mohd Sarjidan ◽  
Ahmad Shuhaimi ◽  
Wan Haliza Abd. Majid
Keyword(s):  
Gate Voltage ◽  
Silver Nanowires ◽  
Silver Nanowire ◽  
Morphological Properties ◽  
Semiconductor Layer ◽  
Small Magnitude ◽  
Light Emitting ◽  
Organic Light ◽  
Light Emitting Transistors ◽  
Source Electrode

A simple spin-coating process for fabricating vertical organic light-emitting transistors (VOLETs) is realized by utilizing silver nanowire (AgNW) as a source electrode. The optical, electrical and morphological properties of the AgNW formation was initially optimized, prior VOFET fabrication. A high molecular weight of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] MEH-PPV was used as an organic semiconductor layer in the VOFET in forming a multilayer structure by solution process. It was found that current density and luminance intensity of the VOLET can be modulated by a small magnitude of gate voltage. The modulation process was induced by changing an injection barrier via gate voltage bias. A space-charge-limited current (SCLC) approach in determining transistor mobility has been introduced. This preliminary and fundamental work is beneficial towards all-solution processing display devices.

scholarly journals Organic Light‐Emitting Transistors: High‐Efficiency Single‐Component Organic Light‐Emitting Transistors (Adv. Mater. 37/2019)

2019 ◽  
Vol 31 (37) ◽  
pp. 1970266
Author(s):  
Zhengsheng Qin ◽  
Haikuo Gao ◽  
Jinyu Liu ◽  
Ke Zhou ◽  
Jie Li ◽  
...  
Keyword(s):  
High Efficiency ◽  
Single Component ◽  
Light Emitting ◽  
Organic Light ◽  
Light Emitting Transistors
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