Molecular-Level Insulation: An Approach to Controlling Interfacial Charge Transfer

2004 ◽  
Vol 16 (14) ◽  
pp. 1177-1181 ◽  
Author(s):  
S. A. Haque ◽  
J. S. Park ◽  
M. Srinivasarao ◽  
J. R. Durrant
Keyword(s):  
Charge Transfer ◽  
Molecular Level ◽  
Interfacial Charge Transfer ◽  
Interfacial Charge

The suppression of spin–orbit coupling effect by the ZnO layer of La0.7Sr0.3MnO3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Charge Transfer ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Negative Magnetoresistance ◽  
Magnetic Scattering ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Charge Transfer ◽  
Positive Magnetoresistance ◽  
Interfacial Charge

In Si–La0.7Sr0.3MnO3, the interfacial charge transfer driven strong localized antiferromagnetic and spin–orbit couplings favor positive magnetoresistance, which is suppressed by strong magnetic scattering induced by the top ZnO layer results in negative magnetoresistance.

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