Field-Effect Transistors Based on Oligothienylenevinylenes: From Solution π-Dimers to High-Mobility Organic Semiconductors

2003 ◽  
Vol 15 (4) ◽  
pp. 306-310 ◽  
Author(s):  
C. Videlot ◽  
J. Ackermann ◽  
P. Blanchard ◽  
J.-M. Raimundo ◽  
P. Frère ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility

ChemInform Abstract: Air-Stable and High-Mobility Organic Semiconductors Based on Heteroarenes for Field-Effect Transistors

ChemInform ◽  
2011 ◽  
Vol 42 (42) ◽  
pp. no-no
Author(s):  
Shoji Shinamura ◽  
Itaru Osaka ◽  
Eigo Miyazaki ◽  
Kazuo Takimiya
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility

Air-Stable and High-Mobility Organic Semiconductors Based on Heteroarenes for Field-Effect Transistors

Heterocycles ◽  
2011 ◽  
Vol 83 (6) ◽  
pp. 1187 ◽  
Author(s):  
Kazuo Takimiya ◽  
Shoji Shinamura ◽  
Itaru Osaka ◽  
Eigo Miyazaki
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility

Three-Dimensional Organic Field-Effect Transistors: Charge Accumulation in their Vertical Semiconductor Channels

2009 ◽  
Vol 1154 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
High Mobility ◽  
Double Layers ◽  
Organic Field Effect Transistors ◽  
Output Current ◽  
Active Matrix ◽  
High Output

AbstractThree-dimensional organic field-effect transistors are developed with multiple vertical channels of organic semiconductors to gain high output current and high on-off ratio. High-mobility and air-stable dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene thin films deposited on horizontally elongated vertical sidewalls have realized unprecedented high output current per area of 2.6 A/cm2 with the application of drain voltage -10 V and gate voltage -20 V. The on-off ratio is as high as 2.7×106. Carrier mobility of the organic semiconductor deposited on the vertical sidewalls is typically 0.30 cm2/Vs. The structure is built also on plastic substrates, where still considerable current modulation is preserved with high output current per area of 70 mA/cm2 and with high on-off ratio of 8.7×106. The performance exceeds practical requirements for applications in driving organic light-emitting diodes in active-matrix displays. The technique of gating with electric double layers of ionic liquid is also introduced to the three-dimensional transistor structure.

High mobility BaSnO3 films and field effect transistors on non-perovskite MgO substrate

2016 ◽  
Vol 109 (26) ◽  
pp. 262102 ◽  
Author(s):  
Juyeon Shin ◽  
Young Mo Kim ◽  
Youjung Kim ◽  
Chulkwon Park ◽  
Kookrin Char
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Mgo Substrate

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

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