scholarly journals Out‐of‐Plane Resistance Switching of 2D Bi 2 O 2 Se at the Nanoscale (Adv. Funct. Mater. 52/2021)

2021 ◽  
Vol 31 (52) ◽  
pp. 2170388
Author(s):  
Wenjun Chen ◽  
Rongjie Zhang ◽  
Rongxu Zheng ◽  
Bilu Liu
Keyword(s):  
Resistance Switching ◽  
Out Of Plane

scholarly journals Out‐of‐Plane Resistance Switching of 2D Bi 2 O 2 Se at the Nanoscale

2021 ◽  
pp. 2105795
Author(s):  
Wenjun Chen ◽  
Rongjie Zhang ◽  
Rongxu Zheng ◽  
Bilu Liu
Keyword(s):  
Resistance Switching ◽  
Out Of Plane

Grain separation enhanced magnetic coercivity in Pt/Co multilayers.

1993 ◽  
Vol 51 ◽  
pp. 1038-1039 ◽  
Author(s):  
G.A. Bertero ◽  
R. Sinclair
Keyword(s):  
Remanent Magnetization ◽  
Strong Influence ◽  
Uniaxial Anisotropy ◽  
Magnetic Coupling ◽  
Recording Media ◽  
Magnetic Media ◽  
Signal To Noise ◽  
Out Of Plane ◽  
Longitudinal Recording ◽  
The Relationship

Pt/Co multilayers displaying perpendicular (out-of-plane) magnetic anisotropy and 100% perpendicular remanent magnetization are strong candidates as magnetic media for the next generation of magneto-optic recording devices. The magnetic coercivity, Hc, and uniaxial anisotropy energy, Ku, are two important materials parameters, among others, in the quest to achieving higher recording densities with acceptable signal to noise ratios (SNR). The relationship between Ku and Hc in these films is not a simple one since features such as grain boundaries, for example, can have a strong influence on Hc but affect Ku only in a secondary manner. In this regard grain boundary separation provides a way to minimize the grain-to-grain magnetic coupling which is known to result in larger coercivities and improved SNR as has been discussed extensively in the literature for conventional longitudinal recording media.We present here results from the deposition of two Pt/Co/Tb multilayers (A and B) which show significant differences in their coercive fields.

Anisotropy of Nanoindentation – a tool for the determination of nanocrystal orientation ?

2003 ◽  
Vol 779 ◽  
Author(s):  
David Christopher ◽  
Steven Kenny ◽  
Roger Smith ◽  
Asta Richter ◽  
Bodo Wolf ◽  
...  
Keyword(s):  
Crystal Surface ◽  
Scanning Force Microscopy ◽  
Depth Range ◽  
Dislocation Loops ◽  
Force Microscopy ◽  
Pile Up ◽  
Out Of Plane ◽  
Scanning Force ◽  
Dynamics Simulations

AbstractThe pile up patterns arising in nanoindentation are shown to be indicative of the sample crystal symmetry. To explain and interpret these patterns, complementary molecular dynamics simulations and experiments have been performed to determine the atomistic mechanisms of the nanoindentation process in single crystal Fe{110}. The simulations show that dislocation loops start from the tip and end on the crystal surface propagating outwards along the four in-plane <111> directions. These loops carry material away from the indenter and form bumps on the surface along these directions separated from the piled-up material around the indenter hole. Atoms also move in the two out-of-plane <111> directions causing propagation of subsurface defects and pile-up around the hole. This finding is confirmed by scanning force microscopy mapping of the imprint, the piling-up pattern proving a suitable indicator of the surface crystallography. Experimental force-depth curves over the depth range of a few nanometers do not appear smooth and show distinct pop-ins. On the sub-nanometer scale these pop-ins are also visible in the simulation curves and occur as a result of the initiation of the dislocation loops from the tip.

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