scholarly journals Interfacial Strain Gradients Control Nanoscale Domain Morphology in Epitaxial BiFeO 3 Multiferroic Films

2020 ◽  
Vol 30 (22) ◽  
pp. 2000343
Author(s):  
Daniel Sando ◽  
Mengjiao Han ◽  
Vivasha Govinden ◽  
Oliver Paull ◽  
Florian Appert ◽  
...  
Keyword(s):  
Strain Gradients ◽  
Multiferroic Films ◽  
Interfacial Strain

scholarly journals Giant flexoelectric effect through interfacial strain relaxation

2012 ◽  
Vol 370 (1977) ◽  
pp. 4944-4957 ◽  
Author(s):  
Daesu Lee ◽  
Tae Won Noh
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Ferroelectric Properties ◽  
Epitaxial Thin Films ◽  
Epitaxial Thin Film ◽  
Strain Gradients ◽  
Bulk Solids ◽  
Flexoelectric Effect ◽  
Potential Applications ◽  
Interfacial Strain

Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MV m −1 by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.

scholarly journals Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain

2016 ◽  
Vol 8 (26) ◽  
pp. 16845-16851 ◽  
Author(s):  
Wenrui Zhang ◽  
Mingtao Li ◽  
Aiping Chen ◽  
Leigang Li ◽  
Yuanyuan Zhu ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Layered Oxide ◽  
Layer Stacking ◽  
Interfacial Strain ◽  
Self Assembled ◽  
Self Assembled Layer

scholarly journals Conservation Integrals in Nonhomogeneous Materials with Flexoelectricity

2021 ◽  
Vol 11 (2) ◽  
pp. 681
Author(s):  
Pengfei Yu ◽  
Weifeng Leng ◽  
Yaohong Suo
Keyword(s):  
Electromechanical Coupling ◽  
Energy Momentum Tensor ◽  
Great Influence ◽  
Operator Method ◽  
Electric Polarization ◽  
Momentum Tensor ◽  
Noether Theorem ◽  
Strain Gradients ◽  
Flexoelectric Effect ◽  
Nonhomogeneous Materials

The flexoelectricity, which is a new electromechanical coupling phenomenon between strain gradients and electric polarization, has a great influence on the fracture analysis of flexoelectric solids due to the large gradients near the cracks. On the other hand, although the flexoelectricity has been extensively investigated in recent decades, the study on flexoelectricity in nonhomogeneous materials is still rare, especially the fracture problems. Therefore, in this manuscript, the conservation integrals for nonhomogeneous flexoelectric materials are obtained to solve the fracture problem. Application of operators such as grad, div, and curl to electric Gibbs free energy and internal energy, the energy-momentum tensor, angular momentum tensor, and dilatation flux can also be derived. We examine the correctness of the conservation integrals by comparing with the previous work and discuss the operator method here and Noether theorem in the previous work. Finally, considering the flexoelectric effect, a nonhomogeneous beam problem with crack is solved to show the application of the conservation integrals.

Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy

2004 ◽  
Vol 457-460 ◽  
pp. 277-280 ◽  
Author(s):  
Etienne Bustarret ◽  
Daniel Araújo ◽  
David Méndez ◽  
Francisco M. Morales ◽  
F.J. Pacheco ◽  
...  
Keyword(s):  
Interfacial Strain

scholarly journals Microcharacterization of Interfaces

1982 ◽  
Vol 18 ◽  
Author(s):  
P. M. PETROFF
Keyword(s):  
Phase Contrast ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Carrier Recombination ◽  
Roughening Transition ◽  
Semiconductor Heterostructure ◽  
Transmission Electron ◽  
Quantum Well Wire ◽  
Interfacial Strain

The atomic structure of semiconductor heterostructure interfaces and metalsemiconductor interfaces are best characterized by transmission electron microscopy (TEM). Both phase contrast TEM and structure factor contrast TEM are able to distinguish very small structural (two monolayers) or compositional (less than 0.2%) fluctuations at interfaces. Applications of these techniques to the study of the roughening transition temperature at the Gal−xAlxAs–GaAs and Ga1−xAlxAs–Ge interfaces grown by molecular beam epitaxy are presented. Minority carrier recombination at interfaces is characterized on a microscopic scale by low temperature cathodoluminescence. This technique is used to demonstrate the role of interfaces in gettering defects in Gal1−xAlxAs/GaAs heterostructures. Finally, the effects of interfacial strain in producing a localization of the luminescence in GaAs quantum well wire structures will be discussed.

Phase-based Bragg intra-grating sensing of strain gradients

1995 ◽  
Author(s):  
Myo M. Ohn ◽  
Simon Sandgren ◽  
Shang Yuan Huang ◽  
Robert Maaskant ◽  
Raoul Stubbe ◽  
...  
Keyword(s):  
Strain Gradients

Consequences of lattice expansive strain gradients on hydrogen loading in palladium

1997 ◽  
Vol 56 (5) ◽  
pp. 2417-2420 ◽  
Author(s):  
A. De Ninno ◽  
V. Violante ◽  
A. La Barbera
Keyword(s):  
Strain Gradients
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