Solution‐Processable, High‐Performance Flexible Electroluminescent Devices Based on High‐ k Nanodielectrics

2019 ◽  
Vol 29 (39) ◽  
pp. 1904377 ◽  
Author(s):  
Ravi Shanker ◽  
Seungse Cho ◽  
Ayoung Choe ◽  
Minsoo P. Kim ◽  
Ziyauddin Khan ◽  
...  
Keyword(s):  
High Performance ◽  
Electroluminescent Devices ◽  
High K ◽  
Solution Processable

Sub-20nm Device Voltage-Sensitive SRAM Characterization and Failure Analysis

2018 ◽  
Author(s):  
Seng Nguon Ting ◽  
Hsien-Ching Lo ◽  
Donald Nedeau ◽  
Aaron Sinnott ◽  
Felix Beaudoin
Keyword(s):  
Failure Analysis ◽  
High Performance ◽  
Yield Loss ◽  
Technology Development ◽  
High Density ◽  
High K ◽  
Yield Learning ◽  
Oxide Deposition ◽  
Edge Profile ◽  
High K Dielectric

Abstract With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield loss from the expected hard bit-cells failures. It can only be accomplished by extensively leveraging yield, layout analysis and fault localization in sub-micron devices. In this paper, we describe the successful debugging of the yield gap observed between the High Density and the High Performance bit-cells. The SRAM yield loss is observed to be strongly modulated by different active sizing between two pull up (PU) bit-cells. Failure analysis focused at the weak point vicinity successfully identified abnormal poly edge profile with systematic High k Dielectric shorts. Tight active space on High Density cells led to limitation of complete trench gap-fill creating void filled with gate material. Thanks to this knowledge, the process was optimized with “Skip Active Atomic Level Oxide Deposition” step improving trench gap-fill margin.

New hole transport styrene polymers bearing highly π-extended conjugated side-chain moieties for high-performance solution-processable thermally activated delayed fluorescence OLEDs

2021 ◽  
Vol 12 (11) ◽  
pp. 1692-1699
Author(s):  
Ji Hye Lee ◽  
Jinhyo Hwang ◽  
Chai Won Kim ◽  
Amit Kumar Harit ◽  
Han Young Woo ◽  
...  
Keyword(s):  
High Performance ◽  
High Efficiency ◽  
Delayed Fluorescence ◽  
Hole Transport ◽  
Side Chain ◽  
Solution Processed ◽  
Thermally Activated Delayed Fluorescence ◽  
Thermally Activated ◽  
Turn On ◽  
Solution Processable

New polystyrene-based polymers with high π-extended hole transport pendants were synthesized to obtain a low turn-on voltage and high efficiency in solution-processed green TADF-OLEDs.

Interfacial polarization-induced high-k polymer dielectric film for high-performance triboelectric devices

Nano Energy ◽  
2021 ◽  
Vol 82 ◽  
pp. 105697
Author(s):  
Minsoo P. Kim ◽  
Chang Won Ahn ◽  
Youngsu Lee ◽  
Kyoungho Kim ◽  
Jonghwa Park ◽  
...  
Keyword(s):  
High Performance ◽  
Dielectric Film ◽  
Interfacial Polarization ◽  
Polymer Dielectric ◽  
High K

High performance red phosphorescent organic electroluminescent devices with characteristic mechanisms by utilizing terbium or gadolinium complexes as sensitizers

2017 ◽  
Vol 5 (8) ◽  
pp. 2066-2073 ◽  
Author(s):  
Rongzhen Cui ◽  
Weiqiang Liu ◽  
Liang Zhou ◽  
Xuesen Zhao ◽  
Yunlong Jiang ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Color Purity ◽  
Electroluminescent Devices ◽  
Light Emitting ◽  
Organic Light ◽  
Gadolinium Complexes ◽  
Organic Electroluminescent ◽  
High Color Purity

High performance sensitized organic light-emitting diodes with high color purity were obtained by utilizing terbium or gadolinium complexes as sensitizers.

32nm gate-first high-k/metal-gate technology for high performance low power applications

2008 ◽  
Author(s):  
C. H. Diaz ◽  
K. Goto ◽  
H.T. Huang ◽  
Yuri Yasuda ◽  
C.P. Tsao ◽  
...  
Keyword(s):  
Low Power ◽  
High Performance ◽  
Metal Gate ◽  
High K

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

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