Recent Progress on High-Capacitance Polymer Gate Dielectrics for Flexible Low-Voltage Transistors

2018 ◽  
Vol 28 (42) ◽  
pp. 1802201 ◽  
Author(s):  
Benjamin Nketia-Yawson ◽  
Yong-Young Noh
Keyword(s):  
Recent Progress ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
High Capacitance

scholarly journals Robust High‐Capacitance Polymer Gate Dielectrics for Stable Low‐Voltage Organic Field‐Effect Transistor Sensors

2020 ◽  
Vol 6 (3) ◽  
pp. 1901127 ◽  
Author(s):  
Aiman Rahmanudin ◽  
Daniel J. Tate ◽  
Raymundo Marcial‐Hernandez ◽  
Nicholas Bull ◽  
Suresh K. Garlapati ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Organic Field Effect Transistor ◽  
High Capacitance ◽  
Effect Transistor

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

2019 ◽  
Vol 5 (6) ◽  
pp. 1900067 ◽  
Author(s):  
Katherina Haase ◽  
Jakob Zessin ◽  
Konstantinos Zoumboulis ◽  
Markus Müller ◽  
Mike Hambsch ◽  
...  
Keyword(s):  
Low Voltage ◽  
Organic Transistors ◽  
High Capacitance ◽  
Polymer Dielectric

Mn-doped Ba0.6Sr0.4TiO3 high-K gate dielectrics for low voltage organic transistor on polymer substrate

2005 ◽  
Vol 87 (24) ◽  
pp. 242908 ◽  
Author(s):  
KyongTae Kang ◽  
Mi-Hwa Lim ◽  
Ho-Gi Kim ◽  
YongWoo Choi ◽  
Harry L. Tuller ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Polymer Substrate ◽  
Organic Transistor ◽  
High K ◽  
Mn Doped

Flexible Low-Voltage IGZO Thin-Film Transistors With Polymer Electret Gate Dielectrics on Paper Substrates

2019 ◽  
Vol 40 (2) ◽  
pp. 224-227 ◽  
Author(s):  
Xiangyu Wang ◽  
Ya Gao ◽  
Zehua Liu ◽  
Jie Luo ◽  
Qing Wan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Paper Substrates

Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

2009 ◽  
Vol 8 (11) ◽  
pp. 898-903 ◽  
Author(s):  
Bhola N. Pal ◽  
Bal Mukund Dhar ◽  
Kevin C. See ◽  
Howard E. Katz
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Sodium Beta Alumina ◽  
Beta Alumina

Recent Progress in SOI Materials and Devices for VLSI Applications

1993 ◽  
Vol 316 ◽  
Author(s):  
H. H. Hosack
Keyword(s):  
High Performance ◽  
Large Scale ◽  
Recent Progress ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Significant Interest ◽  
Significant Performance ◽  
Cmos Ic ◽  
Bulk Processing ◽  
Soi Technology

Silicon-On-Insulator (SOI) technology [1-4] has been shown to have significant performance and fabrication advantages over conventional bulk processing for a wide variety of large scale CMOS IC applications. Advantages in radiation environments has generated significant interest in this technology from military and space science communities [5,6]. Possible advantages of SOI technology for low power, low voltage and high performance circuit applications is under serious consideration by several commercial IC manufacturers [7,8].

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