Regulated Dewetting for Patterning Organic Single Crystals with Pure Crystallographic Orientation toward High Performance Field-Effect Transistors

2018 ◽  
Vol 28 (49) ◽  
pp. 1800470 ◽  
Author(s):  
Yuyan Zhao ◽  
Xiaoyu Fan ◽  
Jiangang Feng ◽  
Xuedong Wang ◽  
Yuchen Wu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Crystallographic Orientation ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

N-Type 2D Organic Single Crystals for High-Performance Organic Field-Effect Transistors and Near-Infrared Phototransistors

2018 ◽  
Vol 30 (16) ◽  
pp. 1706260 ◽  
Author(s):  
Cong Wang ◽  
Xiaochen Ren ◽  
Chunhui Xu ◽  
Beibei Fu ◽  
Ruihao Wang ◽  
...  
Keyword(s):  
Single Crystals ◽  
Field Effect ◽  
High Performance ◽  
Near Infrared ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals High performance organic field-effect transistors using ambient deposition of tetracene single crystals

2016 ◽  
Vol 33 ◽  
pp. 269-273 ◽  
Author(s):  
Logan A. Morrison ◽  
Dane Stanfield ◽  
Michael Jenkins ◽  
Alexandr A. Baronov ◽  
David L. Patrick ◽  
...  
Keyword(s):  
Single Crystals ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Cyano-substituted oligo(p-phenylene vinylene) single-crystal with balanced hole and electron injection and transport for ambipolar field-effect transistors

2015 ◽  
Vol 17 (5) ◽  
pp. 3421-3425 ◽  
Author(s):  
Jian Deng ◽  
Jia Tang ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Yan Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Electron Injection ◽  
Phenylene Vinylene ◽  
Organic Field Effect Transistors ◽  
Green Fluorescent

High performance symmetric OFETs (organic field-effect transistors) made with strong green fluorescent single-crystals demonstrated well-balanced mobilities of around 0.5 cm2 V−1 s−1.

High-performance n- and p-type organic single-crystal field-effect transistors with an air-gap dielectric towards anti-ambipolar transport

2020 ◽  
Vol 8 (13) ◽  
pp. 4303-4308 ◽  
Author(s):  
Jianghong Liu ◽  
Jie Liu ◽  
Jing Zhang ◽  
Chunlei Li ◽  
Qiuhong Cui ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Air Gap ◽  
Crystal Field Effect ◽  
Organic Single Crystal ◽  
P Type ◽  
Ambipolar Transport

By combining high-performance n- and p-type single crystals with an air-gap dielectric, excellent anti-ambipolar transport with a small hysteresis was achieved.

Precise Patterning of Single Crystal Arrays of Organic Semiconductors by Patterned Microchannel Dip-coating Method for Organic Field-Effect Transistors

2021 ◽  
Author(s):  
Chaoqiang Wang ◽  
Zhengjun Lu ◽  
Wei Deng ◽  
Wanqin Zhao ◽  
Bei Lu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Dip Coating ◽  
Organic Field Effect Transistors ◽  
Coating Method ◽  
Dip Coating Method

Control over the growth location and orientation of organic semiconductor single crystals (OSSCs) is of key importance to enable high-performance organic circuits. However, the previous approaches are difficult to create...

Large-domain Organic Crystalline Films for Field-effect Transistors

2008 ◽  
Vol 1091 ◽  
Author(s):  
Y. Tominari ◽  
M. Uno ◽  
M. Yamagishi ◽  
Y. Suzuki ◽  
A. Wakamiya ◽  
...  
Keyword(s):  
Single Crystals ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Organic Transistors ◽  
Organic Crystals ◽  
Large Area ◽  
Large Domain ◽  
Crystalline Films

AbstractWe report a method to fabricate thin films of large-domain organic semiconductor single crystals dispersed over the whole surface of centimeter-scale substrates for field-effect transistors. Growing less than 500-nm thick film-like organic crystals of sub-millimeter sizes densely in a furnace independently of substrates by physical vapor transport, the collection of the single crystals is mechanically attached to the surface of gate dielectric layers. The organic transistors made of large-domain benzo-annulated pentathienoacene crystals exhibited pronounced transistor performances with mobility values of ∼ 0.2-2 cm2/Vs, which is as high as devices of one-piece crystals. The result demonstrates that the above technique provides a method to apply high performance of organic single crystal transistors to real circuitry devices on large-area substrates.

External-force-driven solution epitaxy of large-area 2D organic single crystals for high-performance field-effect transistors

Nano Research ◽  
2019 ◽  
Vol 12 (11) ◽  
pp. 2796-2801 ◽  
Author(s):  
Jinwen Wang ◽  
Wei Deng ◽  
Wei Wang ◽  
Ruofei Jia ◽  
Xiuzhen Xu ◽  
...  
Keyword(s):  
Single Crystals ◽  
External Force ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Large Area

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

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