scholarly journals Graphene Oxide Memory: Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory (Adv. Funct. Mater. 43/2015)

2015 ◽  
Vol 25 (43) ◽  
pp. 6694-6694 ◽  
Author(s):  
Sung Kyu Kim ◽  
Jong Yoon Kim ◽  
Sung-Yool Choi ◽  
Jeong Yong Lee ◽  
Hu Young Jeong
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Direct Observation ◽  
Resistive Switching Memory ◽  
Switching Memory

Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory

2015 ◽  
Vol 25 (43) ◽  
pp. 6710-6715 ◽  
Author(s):  
Sung Kyu Kim ◽  
Jong Yoon Kim ◽  
Sung-Yool Choi ◽  
Jeong Yong Lee ◽  
Hu Young Jeong
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Direct Observation ◽  
Resistive Switching Memory ◽  
Switching Memory

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

ACS Nano ◽  
2017 ◽  
Vol 11 (2) ◽  
pp. 1712-1718 ◽  
Author(s):  
Kai Qian ◽  
Roland Yingjie Tay ◽  
Meng-Fang Lin ◽  
Jingwei Chen ◽  
Huakai Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Direct Observation ◽  
Resistive Switching Memory ◽  
Switching Memory
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