UV-Light-Driven Oxygen Pumping in a High-Temperature Solid Oxide Photoelectrochemical Cell

2015 ◽  
Vol 26 (1) ◽  
pp. 120-128 ◽  
Author(s):  
Georg Christoph Brunauer ◽  
Bernhard Rotter ◽  
Gregor Walch ◽  
Esmaeil Esmaeili ◽  
Alexander Karl Opitz ◽  
...  
Keyword(s):  
High Temperature ◽  
Uv Light ◽  
Solid Oxide ◽  
Photoelectrochemical Cell ◽  
Oxygen Pumping

scholarly journals A solid oxide photoelectrochemical cell with UV light-driven oxygen storage in mixed conducting electrodes

2017 ◽  
Vol 5 (4) ◽  
pp. 1637-1649 ◽  
Author(s):  
Gregor Walch ◽  
Bernhard Rotter ◽  
Georg Christoph Brunauer ◽  
Esmaeil Esmaeili ◽  
Alexander Karl Opitz ◽  
...  
Keyword(s):  
Electrochemical Cell ◽  
Uv Light ◽  
Solid Oxide ◽  
Photoelectrochemical Cell ◽  
Oxygen Storage ◽  
Uv Illumination ◽  
Working Electrode

A SrTiO3 working electrode at 360–460 °C incorporates oxygen under UV illumination. This leads to a voltage in a solid oxide (photo-)electrochemical cell..

CO2 Capture at Medium to High Temperature Using Solid Oxide-Based Sorbents: Fundamental Aspects, Mechanistic Insights, and Recent Advances

2021 ◽  
Author(s):  
Matthew T. Dunstan ◽  
Felix Donat ◽  
Alexander H. Bork ◽  
Clare P. Grey ◽  
Christoph R. Müller
Keyword(s):  
High Temperature ◽  
Co2 Capture ◽  
Solid Oxide ◽  
Recent Advances

Mechanistic Studies of Water Electrolysis and Hydrogen Electro-Oxidation on High Temperature Ceria-Based Solid Oxide Electrochemical Cells

2013 ◽  
Vol 135 (31) ◽  
pp. 11572-11579 ◽  
Author(s):  
Chunjuan Zhang ◽  
Yi Yu ◽  
Michael E. Grass ◽  
Catherine Dejoie ◽  
Wuchen Ding ◽  
...  
Keyword(s):  
High Temperature ◽  
Water Electrolysis ◽  
Solid Oxide ◽  
Electrochemical Cells ◽  
Mechanistic Studies ◽  
Electro Oxidation

scholarly journals Development of high-temperature electrochemical TEM and its application on solid oxide electrolysis cells

2021 ◽  
Vol 27 (S1) ◽  
pp. 3138-3139
Author(s):  
Søren Bredmose Simonsen ◽  
Waynah Lou Dacayan ◽  
Zhongtao Ma ◽  
Christodoulos Chatzichristodoulou ◽  
Wenjing Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Solid Oxide ◽  
Electrolysis Cells ◽  
Solid Oxide Electrolysis ◽  
Solid Oxide Electrolysis Cells

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

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