Donor-Induced Performance Tuning of Amorphous SrTiO3Memristive Nanodevices: Multistate Resistive Switching and Mechanical Tunability

2015 ◽  
Vol 25 (21) ◽  
pp. 3172-3182 ◽  
Author(s):  
Hussein Nili ◽  
Sumeet Walia ◽  
Ahmad Esmaielzadeh Kandjani ◽  
Rajesh Ramanathan ◽  
Philipp Gutruf ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Performance Tuning ◽  
Mechanical Tunability

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

scholarly journals Investigation of resistive switching in gallium oxide nanostructures formed by local anodic oxidation

2019 ◽  
Vol 1410 ◽  
pp. 012233 ◽  
Author(s):  
R V Tominov ◽  
N A Polupanov ◽  
V I Avilov ◽  
M S Solodovnik ◽  
N V Parshina ◽  
...  
Keyword(s):  
Anodic Oxidation ◽  
Resistive Switching ◽  
Gallium Oxide ◽  
Oxide Nanostructures ◽  
Local Anodic Oxidation

Bipolar Resistive Switching in the Ag/Sb2Te3/Pt Heterojunction

2021 ◽  
Author(s):  
Zhenhua Wu ◽  
Yinxiao Feng ◽  
Yan Liu ◽  
Huilie Shi ◽  
Shuai Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching

scholarly journals Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42249-42255
Author(s):  
Xiaohan Wu ◽  
Ruijing Ge ◽  
Yifu Huang ◽  
Deji Akinwande ◽  
Jack C. Lee
Keyword(s):  
Resistive Switching ◽  
Constant Voltage ◽  
Switching Device ◽  
Current Stress ◽  
Electric Stress ◽  
State Evolution ◽  
Conductive Bridge ◽  
Resistance State ◽  
Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

Study of resistive switching, photoresponse, and magnetism modulation in the Pt/Co3O4/Nb:SrTiO3 heterostructure

2021 ◽  
Vol 118 (15) ◽  
pp. 153501
Author(s):  
Meng Zhao ◽  
Yongdan Zhu ◽  
Yuan Zhang ◽  
Teng Zhang
Keyword(s):  
Resistive Switching

Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs

2021 ◽  
pp. 1-7
Author(s):  
S. Biswas ◽  
A. D. Paul ◽  
P. Das ◽  
P. Tiwary ◽  
H. J. Edwards ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interfacial Layer ◽  
Switching Performance

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

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