scholarly journals Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

2015 ◽  
Vol 25 (11) ◽  
pp. 1727-1736 ◽  
Author(s):  
John G. Labram ◽  
Yen-Hung Lin ◽  
Kui Zhao ◽  
Ruipeng Li ◽  
Stuart R. Thomas ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductors ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Ultrathin Layers ◽  
Energy States

Flexible low-power source-gated transistors with solution-processed metal–oxide semiconductors

Nanoscale ◽  
2020 ◽  
Vol 12 (42) ◽  
pp. 21610-21616
Author(s):  
Dingwei Li ◽  
Momo Zhao ◽  
Kun Liang ◽  
Huihui Ren ◽  
Quantan Wu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Power Consumption ◽  
Low Power ◽  
High Gain ◽  
Power Source ◽  
Metal Oxide Semiconductors ◽  
Low Power Consumption ◽  
Light Weight ◽  
Solution Processed ◽  
Oxide Semiconductors

Flexible light weight In2O3-based source-gated transistors are achieved with high gain, fast saturation and low power consumption.

Catalytic Metal-Accelerated Crystallization of High-Performance Solution-Processed Earth-Abundant Metal Oxide Semiconductors

2020 ◽  
Vol 12 (22) ◽  
pp. 25000-25010
Author(s):  
Jae Cheol Shin ◽  
Sung Min Kwon ◽  
Jingu Kang ◽  
Seong Pil Jeon ◽  
Jae-Sang Heo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Earth Abundant ◽  
Catalytic Metal

scholarly journals Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors

2021 ◽  
Author(s):  
Shun Watanabe ◽  
Xiaozhu Wei ◽  
Shohei Kumagai ◽  
Tatsuyuki Makita ◽  
Kotaro Tsuzuku ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
High Speed ◽  
High Mobility ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Ring Oscillators ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Amorphous Metal Oxide

Abstract Solution-processed single-crystal organic semiconductors (OSCs) and amorphous metal oxide semiconductors (MOSs) are promising for high-mobility, p- and n-channel thin-film transistors (TFTs), respectively. Organic−inorganic hybrid complementary circuits hence have great potential to satisfy practical requirements; however, some chemical incompatibilities between OSCs and MOSs, such as heat and chemical resistance, conventionally make it difficult to rationally integrate TFTs based on solution-processed OSC and MOS into the same substrates. In this work, we achieved a rational integration method based on the solution-processed semiconductors by carefully managing the device configuration and the deposition and patterning techniques from materials point of view. The balanced high performances as well as the uniform fabrication of the TFTs led to densely integrated five-stage ring oscillators with the stage propagation delay of 1.3 µs, which is the fastest operation among ever reported complementary ring oscillators based on solution-processed semiconductors.

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