Ferroelectric Materials: Probing Local and Global Ferroelectric Phase Stability and Polarization Switching in Ordered Macroporous PZT (Adv. Funct. Mater. 5/2011)

2011 ◽  
Vol 21 (5) ◽  
pp. 802-802 ◽  
Author(s):  
Martyn A. McLachlan ◽  
David W. McComb ◽  
Mary P. Ryan ◽  
Anna N. Morozovska ◽  
Eugene A. Eliseev ◽  
...  
2011 ◽  
Vol 21 (5) ◽  
pp. 941-947 ◽  
Author(s):  
Martyn A. McLachlan ◽  
David W. McComb ◽  
Mary P. Ryan ◽  
Anna N. Morozovska ◽  
Eugene A. Eliseev ◽  
...  

2007 ◽  
Vol 1034 ◽  
Author(s):  
Marek Pasciak ◽  
Stefano Leoni

AbstractA design approach to ferroelectric materials critically depends on an accurate description of the microscopic features associated with paraelectric-to-ferroelectric phase transitions. The fine structures of domains, domain walls, and domain boundary dynamics as well as a precise understanding of local atomic displacements can be accessed using adequate potential models based on ab initio calculations and advanced molecular dynamics simulations. For BaTiO3 a complex scenario of microscopic domains in the paraelectric (cubic) phase and in the ferroelectric (tetragonal) phase is obtained. Therein, the static and dynamic role of domain/antidomain features, as well as their dependence on Ti displacements around the <111> manifold is clearly emerging.


RSC Advances ◽  
2016 ◽  
Vol 6 (74) ◽  
pp. 70557-70562 ◽  
Author(s):  
F. Wang ◽  
B. Li ◽  
Y. Ou ◽  
L. F. Liu ◽  
C. Z. Peng ◽  
...  

The elastocaloric effect in PbTiO3 with 90° domain structure under the applied stress field at room temperature has been studied. A negative ΔTσ of −7.2 K can be obtained by controlled polarization switching under the applied stress fields.


Author(s):  
S. H. Baek ◽  
C. B. Eom

As a room temperature multi-ferroic with coexisting anti-ferromagnetic, ferroelectric and ferroelastic orders, BiFeO 3 has been extensively studied to realize magnetoelectric devices that enable manipulation of magnetic ordering by an electric field. Moreover, BiFeO 3 is a promising candidate for ferroelectric memory devices because it has the largest remanent polarization ( P r >100 μC cm −2 ) of all ferroelectric materials. For these applications, controlling polarization switching by an electric field plays a crucial role. However, BiFeO 3 has a complex switching behaviour owing to the rhombohedral symmetry: ferroelastic (71 ° , 109 ° ) and ferroelectric (180 ° ) switching. Furthermore, the polarization is switched through a multi-step process: 180 ° switching occurs through three sequential 71 ° switching steps. By using monodomain BiFeO 3 thin-film heterostructures, we correlated such multi-step switching to the macroscopically observed reliability issues of potential devices such as retention and fatigue. We overcame the retention problem (i.e. elastic back-switching of the 71 ° switched area) using monodomain BiFeO 3 islands. Furthermore, we suppressed the fatigue problem of 180 ° switching, i.e. loss of switchable polarization with switching cycles, using a single 71 ° switching path. Our results provide a framework for exploring a route to reliably control multiple-order parameters coupled to ferroelastic order in other rhombohedral and lower-symmetry materials.


2009 ◽  
Vol 92 (4) ◽  
pp. 834-838 ◽  
Author(s):  
Navneet Dabra ◽  
Jasbir S. Hundal ◽  
Kopple C. Sekhar ◽  
Arvind Nautiyal ◽  
Rabinder Nath

Author(s):  
Mingji Su ◽  
Jirong Liu ◽  
Zeping Weng ◽  
Xiang Ding ◽  
Zhengyang Chen ◽  
...  

Abstract We propose an oxygen scavenging technique based on thermodynamic considerations of metal and oxygen systems to stabilize the ferroelectric phase and enhance the ferroelectricity in Hf-based oxides. By using an oxygen scavenging metal to control the oxygen vacancy concentration in Hf-based oxides, the effect of this oxygen scavenging technique in ferroelectric Hf-based oxides was systematically investigated. It was revealed that controlling the oxygen vacancies during the crystallization process is of vital importance to stabilizing the ferroelectric properties. This oxygen scavenging technique is an effective method of improving the performance of Hf-based ferroelectric materials without employing any dopant in HfO2.


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