Simultaneous Electrical and Thermoelectric Parameter Retrieval via Two Terminal Current-Voltage Measurements on Individual ZnO Nanowires

2011 ◽  
Vol 21 (20) ◽  
pp. 3900-3906 ◽  
Author(s):  
Yang Liu ◽  
Zhiyong Zhang ◽  
Xianlong Wei ◽  
Quan Li ◽  
Lian-Mao Peng
Keyword(s):  
Zno Nanowires ◽  
Current Voltage ◽  
Thermoelectric Parameter ◽  
Parameter Retrieval

Quantitative Fitting of Nonlinear Current–Voltage Curves and Parameter Retrieval of Semiconducting Nanowire, Nanotube and Nanoribbon Devices

2008 ◽  
Vol 8 (1) ◽  
pp. 252-258 ◽  
Author(s):  
Y. Liu ◽  
Z. Y. Zhang ◽  
Y. F. Hu ◽  
C. H. Jin ◽  
L.-M. Peng
Keyword(s):  
Quantitative Analysis ◽  
Carrier Density ◽  
Semiconductor Nanowires ◽  
Schottky Barriers ◽  
Metal Electrodes ◽  
One Dimensional ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Semiconducting Nanostructures ◽  
Parameter Retrieval

A quantitative metal-semiconductor-metal (MSM) model and a Matlab based program have been developed and used to obtain parameters that are important for characterizing semiconductor nanowires (NWs), nanotubes (NTs) or nanoribbons (NRs). The use of the MSM model for quantitative analysis of nonlinear current–voltage curves of one-dimensional semiconducting nanostructures is illustrated by working through two examples, i.e., an amorphous carbon NT and a ZnO NW, and the obtained parameters include the carrier density, mobility, resistance of the NT(NW), and the heights of the two Schottky barriers formed at the interfaces between metal electrodes and semiconducting NT(NW).

ZnO Nanowire/p-GaN Heterojunction LEDs

2007 ◽  
Vol 1018 ◽  
Author(s):  
Heiko O. Jacobs ◽  
Jesse Cole ◽  
Amir M. Dabiran ◽  
Heiko O. Jacobs
Keyword(s):  
Reverse Bias ◽  
Forward Bias ◽  
Zno Nanowires ◽  
Hole Injection ◽  
Zno Nanowire ◽  
Defect States ◽  
Light Emitting ◽  
Current Voltage ◽  
Distinct Color ◽  
Two Peaks

AbstractThis article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of the current-voltage characteristics and electroluminescence spectra is presented to determine the transport mechanism and location of electron hole recombination. Reverse bias transport and luminescence are attributed to hot-hole injection from the ZnO nanowires into the GaN film through tunneling breakdown. Forward bias transport and luminescence are attributed to hole injection from the GaN into the ZnO and recombination at defect states inside the ZnO yielding distinct color variations between individual wires. Major resistive losses occurred in the GaN lateral thin film connecting to the vertical ZnO nanowires.

Current-voltage characteristics and parameter retrieval of semiconducting nanowires

2006 ◽  
Vol 88 (7) ◽  
pp. 073102 ◽  
Author(s):  
Z. Y. Zhang ◽  
C. H. Jin ◽  
X. L. Liang ◽  
Q. Chen ◽  
L.-M. Peng
Keyword(s):  
Semiconducting Nanowires ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Parameter Retrieval

Electrical and Magnetic Properties of Doped ZnO Nanowires

2006 ◽  
Vol 957 ◽  
Author(s):  
Gennady N Panin ◽  
Andrey N. Baranov ◽  
Tae Won Kang ◽  
Oleg V. Kononenko ◽  
Sergey V. Dubonos ◽  
...  
Keyword(s):  
Magnetic Measurements ◽  
Magnetic Domain ◽  
Zno Nanowires ◽  
Force Measurements ◽  
Spatially Resolved ◽  
Electrical And Magnetic Properties ◽  
Thermal Growth ◽  
Barrier Formation ◽  
Current Voltage ◽  
Resistance Modulation

ABSTRACTZnO nanowires doped with Mn, Fe, Sn, and Li during the thermal growth following direct chemical synthesis were investigated using electric and magnetic measurements. Current-voltage characteristics of individual nanowires configured as a two-terminal device with Al electrodes show apparent rectify behavior indicating the Schottky-like barrier formation and resistivity being less 3 Ω·cm. Reproducible resistance modulation by a dc voltage at room temperature is observed. Magnetic susceptibility of the doped nanowires as a function of temperature demonstrates Curie–Weiss behavior. Magnetization versus field curves show hysteresis with the coercive field of about 200 Oe. The spatially-resolved magnetic force measurements of individual nanowires revealed the magnetic domain structure. The domains align perpendicular to c-axis and can be polarized in the external magnetic field.

Fabrication of High Sensitive UV Photodetector Based on n-ZnO Nanowire/n-Porous-Si Heterojunction

NANO ◽  
2017 ◽  
Vol 12 (04) ◽  
pp. 1750044 ◽  
Author(s):  
M. M. Haji Shahkarami ◽  
J. Koohsorkhi ◽  
H. Ghafoori Fard
Keyword(s):  
Uv Radiation ◽  
Uv Light ◽  
High Sensitivity ◽  
Significant Rise ◽  
Zno Nanowires ◽  
X Ray Diffraction ◽  
Uv Detector ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve

In this paper, we have reported the high sensitive UV detector using ZnO nanowires prepared on porous silicon (PS). The aligned naturally doped n-type zinc oxide (ZnO) nanowires were grown on both PS and n-Si(100) substrates to produce isotype heterojunctions using hydrothermal method. The length of the nanowires ranges 3–4[Formula: see text][Formula: see text]m and the diameter 150–200[Formula: see text]nm. Grown ZnO nanowires on PS substrate has lower reflectivity value compared with Si substrate. The electrical behavior of such devices has been examined at different intensities of UV radiation. The current–voltage curve of the isotype heterojunction shows rectifying behavior in a dark environment. Under UV light, the current was increased by using PS instead of n-Si under reverse bias. The I–V characteristics of the device show a significant rise in the current for low intensity of UV radiation evidencing the high sensitivity of the reported structure. The sensitivity for such devices is obtained, [Formula: see text] and [Formula: see text] at UV radiation of 1.5[Formula: see text]mW/cm2 intensity at bias voltage of −0.75 V for three proposed structures. The samples have been analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate their structures and geometries.

Current–Voltage Characteristics of ZnO Nanowires Under Uniaxial Loading

2014 ◽  
Vol 13 (4) ◽  
pp. 724-735 ◽  
Author(s):  
Rodolfo Araneo ◽  
Fabiano Bini ◽  
Marialilia Pea ◽  
Andrea Notargiacomo ◽  
Antonio Rinaldi ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Uniaxial Loading ◽  
Current Voltage ◽  
Current Voltage Characteristics

Effect of ZnO Nanowire Doping on the Properties of Poly(3-hexylthiophene) Schottky Diodes

2009 ◽  
Vol 1212 ◽  
Author(s):  
Rachel S. Aga ◽  
R. Aga ◽  
R. Mu
Keyword(s):  
Electrical Resistance ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Device Fabrication ◽  
Zno Nanowires ◽  
Hybrid Nanocomposites ◽  
Nanocomposite Films ◽  
Zno Nanowire ◽  
Current Voltage ◽  
Inorganic Nanomaterials

AbstractDoping polymers with inorganic nanomaterials to form hybrid nanocomposites is an attractive approach to develop new lightweight optoelectronic materials with unique or improved properties. In this work, poly(3-hexylthiophene) (P3HT) Schottky diodes, doped with ZnO nanowires at different P3HT-to-ZnO concentrations, were studied. Device fabrication was carried out by drop casting the nanocomposite on a Pt electrode followed by thermal evaporation of an Al top electrode. ZnO nanowires were prepared via a physical vapor method with Zn as a source. The nanowires were dispersed in chlorobenzene, then the P3HT powder was added. Properties of the diodes were investigated using capacitance-voltage and current-voltage measurements. In addition, electrical resistance of the nanocomposite films was also investigated using a two-point probe measurement with Pt as Ohmic contacts. Results showed that ZnO nanowire doping decreases the built in potential of the diode and the electrical resistance of the nanocomposite film.

Electrical Studies of ZnO Nanowires and Metal Contacts

2015 ◽  
Vol 1131 ◽  
pp. 3-7
Author(s):  
Sattra Thongma ◽  
Artitsupa Boontan ◽  
Thitikorn Boonkoom ◽  
Kittipong Tantisantisom
Keyword(s):  
Indium Tin Oxide ◽  
Optoelectronic Device ◽  
Metal Electrode ◽  
Zno Nanowires ◽  
Metal Contacts ◽  
Voltage Measurement ◽  
Light Emitting ◽  
Current Voltage ◽  
P Type ◽  
A Current

ZnO nanowires are recently used in optoelectronic devices such as sensors, solar cells, and light emitting diodes due to its unique optical and electrical properties. In such devices, a contact between the ZnO nanowires and a metal electrode exists. Hence understanding electrical characteristic between the ZnO nanowires and a metal electrode can facilitate optoelectronic device design. In this work, ZnO nanowires were grown on Indium Tin Oxide (ITO) substrates using a hydrothermal method. Simple devices using the nanowires sandwiched between the ITO and a metal contact (i.e. Au, Al) were fabricated and characterized by a current-voltage measurement. Moreover, studies on p-n junctions between the ZnO nanowires and p-type polymers, poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) and poly(9,9-dioctylfluorene) (PFO), were also fabricated and characterized. The current-voltage measurement of devices clearly shows the rectifying behavior, which is an important characteristic of diodes.

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