Optically-Pumped Lasing in Hybrid Organic-Inorganic Light-Emitting Diodes

2009 ◽  
Vol 19 (13) ◽  
pp. 2130-2136 ◽  
Author(s):  
Myoung Hoon Song ◽  
Dinesh Kabra ◽  
Bernard Wenger ◽  
Richard H. Friend ◽  
Henry J. Snaith
Keyword(s):  
Light Emitting Diodes ◽  
Optically Pumped ◽  
Light Emitting

scholarly journals Optically pumped white light-emitting diodes based on metal halide perovskites and perovskite-related materials

APL Materials ◽  
2020 ◽  
Vol 8 (1) ◽  
pp. 010902 ◽  
Author(s):  
Michael Worku ◽  
Liang-Jin Xu ◽  
Maya Chaaban ◽  
Azza Ben-Akacha ◽  
Biwu Ma
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Metal Halide ◽  
Optically Pumped ◽  
Light Emitting ◽  
Halide Perovskites ◽  
White Light Emitting Diodes

Optically pumped “immersion-lens” infrared light emitting diodes based on narrow-gap III–V semiconductors

2002 ◽  
Vol 36 (7) ◽  
pp. 828-831 ◽  
Author(s):  
M. Aidaraliev ◽  
N. V. Zotova ◽  
S. A. Karandashev ◽  
B. A. Matveev ◽  
M. A. Remennyi ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Infrared Light ◽  
Narrow Gap ◽  
Optically Pumped ◽  
Light Emitting

scholarly journals Optically Pumped Lasing from Hybrid Perovskite Light‐Emitting Diodes

2019 ◽  
Vol 8 (1) ◽  
pp. 1901297 ◽  
Author(s):  
Hoyeon Kim ◽  
Kwangdong Roh ◽  
John P. Murphy ◽  
Lianfeng Zhao ◽  
William B. Gunnarsson ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Optically Pumped ◽  
Light Emitting ◽  
Hybrid Perovskite

scholarly journals Colloidal nanocrystals for quality lighting and displays: milestones and recent developments

Nanophotonics ◽  
2016 ◽  
Vol 5 (1) ◽  
pp. 74-95 ◽  
Author(s):  
Talha Erdem ◽  
Hilmi Volkan Demir
Keyword(s):  
Quantum Wells ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Colloidal Synthesis ◽  
Color Gamut ◽  
Optically Pumped ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Quantum Rods ◽  
Recent Developments

AbstractRecent advances in colloidal synthesis of nanocrystals have enabled high-quality high-efficiency light-emitting diodes, displays with significantly broader color gamut, and optically-pumped lasers spanning the whole visible regime. Here we review these colloidal platforms covering the milestone studies together with recent developments. In the review, we focus on the devices made of colloidal quantum dots (nanocrystals), colloidal quantum rods (nanorods), and colloidal quantum wells (nanoplatelets) as well as those of solution processed perovskites and phosphor nanocrystals. The review starts with an introduction to colloidal nanocrystal photonics emphasizing the importance of colloidal materials for light-emitting devices. Subsequently,we continue with the summary of important reports on light-emitting diodes, in which colloids are used as the color converters and then as the emissive layers in electroluminescent devices. Also,we review the developments in color enrichment and electroluminescent displays. Next, we present a summary of important reports on the lasing of colloidal semiconductors. Finally, we summarize and conclude the review presenting a future outlook.

Optically pumped midinfrared (λ = 3.6 μm) light-emitting diodes based on indium arsenide with photonic crystals

2008 ◽  
Vol 34 (5) ◽  
pp. 405-407 ◽  
Author(s):  
Yu. M. Zadiranov ◽  
N. V. Zotova ◽  
N. D. Il’inskaya ◽  
S. A. Karandashev ◽  
B. A. Matveev ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Indium Arsenide ◽  
Light Emitting Diodes ◽  
Optically Pumped ◽  
Light Emitting

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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