Large-Size Bulk and Thin-Film Stilbazolium-Salt Single Crystals for Nonlinear Optics and THz Generation

2007 ◽  
Vol 17 (13) ◽  
pp. 2018-2023 ◽  
Author(s):  
Z. Yang ◽  
L. Mutter ◽  
M. Stillhart ◽  
B. Ruiz ◽  
S. Aravazhi ◽  
...  
Keyword(s):  
Thin Film ◽  
Nonlinear Optics ◽  
Single Crystals ◽  
Thz Generation ◽  
Large Size

scholarly journals Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
High Performance ◽  
Group Iv ◽  
X Ray Diffraction ◽  
High Quality ◽  
Practical Applications ◽  
Large Size ◽  
Growth Method ◽  
Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

scholarly journals Numerical Analysis of Difficulties of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 25
Author(s):  
Xia Tang ◽  
Botao Liu ◽  
Yue Yu ◽  
Sheng Liu ◽  
Bing Gao
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Czochralski Method ◽  
Liquid Interface ◽  
Spiral Growth ◽  
Growth Time ◽  
Large Size ◽  
Crystal Diameter ◽  
Solid Liquid Interface ◽  
Solid Liquid

The difficulties in growing large-size bulk β-Ga2O3 single crystals with the Czochralski method were numerically analyzed. The flow and temperature fields for crystals that were four and six inches in diameter were studied. When the crystal diameter is large and the crucible space becomes small, the flow field near the crystal edge becomes poorly controlled, which results in an unreasonable temperature field, which makes the interface velocity very sensitive to the phase boundary shape. The effect of seed rotation with increasing crystal diameter was also studied. With the increase in crystal diameter, the effect of seed rotation causes more uneven temperature distribution. The difficulty of growing large-size bulk β-Ga2O3 single crystals with the Czochralski method is caused by spiral growth. By using dynamic mesh technology to update the crystal growth interface, the calculation results show that the solid–liquid interface of the four-inch crystal is slightly convex and the center is slightly concave. With the increase of crystal growth time, the symmetry of cylindrical crystal will be broken, which will lead to spiral growth. The numerical results of the six-inch crystal show that the whole solid–liquid interface is concave and unstable, which is not conducive to crystal growth.

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

Multi-field simulation and optimization of SiNx:H thin-film deposition by large-size tubular LF-PECVD

Solar Energy ◽  
2021 ◽  
Vol 228 ◽  
pp. 575-585
Author(s):  
Jicheng Zhou ◽  
Jing Huang ◽  
Jia Liao ◽  
Yan Guo ◽  
Zengchao Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Simulation And Optimization ◽  
Large Size ◽  
Field Simulation

Development of Cardiac Phased Array with Large-Size PZN-5.5 %PT Single Crystals

2021 ◽  
pp. 1-1
Author(s):  
Chunxiao Zou ◽  
Yi Li ◽  
Shilin Hou ◽  
Zhengrui Liu ◽  
Hu Tang ◽  
...  
Keyword(s):  
Single Crystals ◽  
Phased Array ◽  
Large Size

Growth and characterization of large-size bismuth germanate single crystals by low thermal gradient Czochralski method

1999 ◽  
Vol 197 (4) ◽  
pp. 865-873 ◽  
Author(s):  
R.V Anantha Murthy ◽  
M Ravikumar ◽  
A Choubey ◽  
Krishan Lal ◽  
Lyudmila Kharachenko ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermal Gradient ◽  
Czochralski Method ◽  
Bismuth Germanate ◽  
Large Size

scholarly journals Growth and Characterization of Epsomite Single Crystals Doped with KCl from low Temperature Aqueous Solutions

1970 ◽  
Vol 33 (1) ◽  
pp. 47-54 ◽  
Author(s):  
S Ferdous ◽  
J Podder
Keyword(s):  
Aqueous Solutions ◽  
Single Crystals ◽  
Optical Quality ◽  
Dielectric Studies ◽  
Slow Cooling ◽  
Large Size ◽  
Isothermal Evaporation ◽  
Academy Of Sciences

Highly transparent and well faceted large size epsomite single crystals have been grown in pure form and doped with KCl from aqueous solutions by slow cooling and isothermal evaporation method. The optical quality of the epsomite improves on doping by KCl. Mass growth rates were found to increase with doping of lower concentrations of KCl and then decreases with the higher concentration of KCl. KCl doped epsomite crystal reveals that structures are slightly distorted due to adsorption of Cl- ion into the crystal lattice. DC conductivity along the growth axis for all of the grown crystals increases with temperature in the range of 25 to 70ºC and also increases with the KCl concentration. Dielectric constant is found to be almost independent of frequency up to range of 106Hz. The dielectric studies show the suitability of these grown crystals for optoelectronic applications. DOI: 10.3329/jbas.v33i1.2949 Journal of Bangladesh Academy of Sciences, Vol. 33, No. 1, 47-54, 2009

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