Marangoni Convection in Crystal Growth

2010 ◽  
pp. 413-464 ◽  
Author(s):  
Arne Cröll ◽  
Taketoshi Hibiya ◽  
Suguru Shiratori ◽  
Koichi Kakimoto ◽  
Lijun Liu
Keyword(s):  
Crystal Growth ◽  
Marangoni Convection

Effect of Marangoni Convection on InSb Single Crystal Growth by Horizontal Bridgman Method

2001 ◽  
Vol 692 ◽  
Author(s):  
K. Kodera ◽  
A. Kinoshita ◽  
K. Arafune ◽  
Y. Nakae ◽  
A. Hirata
Keyword(s):  
Crystal Growth ◽  
Binary System ◽  
Temperature Gradient ◽  
Single Crystal ◽  
Grown Crystal ◽  
Marangoni Convection ◽  
Single Crystal Growth ◽  
Control Technique ◽  
Growth System

AbstractIt is necessary to clarify the effect of Marangoni convection on single crystal growth from a melt in order to improve the quality of the grown crystal. Particularly, the deviation of crystalmelt (C-M) interface from a planar shape is a major problem because it may deteriorate the quality of the grown crystal. In this paper, we investigated the effect of thermal and solutal Marangoni convection on C-M interface shape in an In-Sb binary system by the horizontal Bridgman (HB) method. The C-M interface concavity strongly depends on the cooling rate and the temperature gradient under uniform concentration distribution conditions in the melt. A large concavity was observed at low cooling rates and high temperature gradient conditions. The concavity was found to be caused by thermal Marangoni convection, by taking Péclet number into account. Then, we varied the composition of the In-Sb binary system to induce solutal Marangoni convection intentionally. The C-M interface was kept planar in case solutal Marangoni convection occurred in the direction opposite to the thermal one. Therefore, we believe that the utilization of solutal Marangoni convection will be a new control technique to make the C-M interface planar for the HB system. From these results, it was clarified that Marangoni convection plays a significant role in the HB crystal growth system.

Bilayer Rayleigh—Marangoni convection: transitions in flow structures at the interface

1995 ◽  
Vol 451 (1942) ◽  
pp. 487-502 ◽  
Keyword(s):  
Crystal Growth ◽  
Marangoni Convection ◽  
Fluid Flows ◽  
Flow Structures ◽  
Fluid Interface ◽  
Lower Phase ◽  
Fluid Physics ◽  
Physically Based ◽  
Flow Mechanisms ◽  
Total Fluid

The fluid physics of buoyancy-driven (Rayleigh) and interfacial tension-driven (Marangoni) convection is examined for two superimposed layers of fluids. This convection occurs on account of temperature gradients that are imposed perpendicular to the fluid-fluid interface. Interfacial deflections, small as they may be, play an important part in identifying the mechanism that governs the flow, and calculations have been made that indicate whether hot or cold fluid flows towards or away from a crest or a trough. As a result, four possible flow structures or ‘modes’ at the interface have been identified. Two heating styles, heating from below and above, are compared and the behaviour of the fluid physics as a function of total fluid depths, depth ratios and gravity levels is explained. Changes in modes result because of changes in these parameters. We have given plausible physically based arguments that predict the sequential change in modes as these parameters are changed and have ‘verified’ our conjectures with calculations. Flow mechanisms in the case of a solidifying lower phase have also been studied, as this has an application to liquid-encapsulated crystal growth. Where convection is deemed detrimental to crystal homogeneity, we conclude that the liquid-encapsulated method of crystal growth is best conducted under Earth’s gravity.

Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth

2009 ◽  
Vol 44 (8) ◽  
pp. 787-799 ◽  
Author(s):  
F. Mokhtari ◽  
A. Bouabdallah ◽  
M. Zizi ◽  
S. Hanchi ◽  
A. Alemany
Keyword(s):  
Crystal Growth ◽  
Marangoni Convection ◽  
Combined Effects ◽  
Czochralski Crystal Growth

Marangoni convection in the LiCaAIF6 crystal growth by the Czochralski technique

2002 ◽  
Vol 11 (4) ◽  
pp. 348-352 ◽  
Author(s):  
Zhong Zeng ◽  
Jingqiu Chen ◽  
Hiroshi Mizuseki ◽  
Touetsu Shishido ◽  
Kyoko Ichinoseki ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Marangoni Convection ◽  
Czochralski Technique
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