Organic Electro-Optic Modulators with Substantially Enhanced Performance Based on Transparent Electrodes

Fabrication and spectroscopic characterization of graphene transparent electrodes on flexible cyclo-olefin substrates for terahertz electro-optic applications

Nanotechnology ◽

10.1088/1361-6528/ab96e6 ◽

2020 ◽

Vol 31 (36) ◽

pp. 364006

Author(s):

Annalisa D’Arco ◽

Valentina Mussi ◽

Stefan Petrov ◽

Silvia Tofani ◽

Massimo Petrarca ◽

...

Keyword(s):

Spectroscopic Characterization ◽

Transparent Electrodes ◽

Electro Optic

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Electro-optic lens composed of transparent electrodes on PLZT ceramic towards optoelectronic devices

10.1117/12.34818 ◽

1990 ◽

Cited By ~ 1

Author(s):

Heihachi Sato ◽

Tsuyoshi Tatebayashi ◽

Takashi Yamamoto ◽

Kunihiko Hayashi

Keyword(s):

Optoelectronic Devices ◽

Transparent Electrodes ◽

Plzt Ceramic ◽

Electro Optic

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Use of sandwich structures with ZnO:Al transparent electrodes for the measurement of the electro-optic properties of standard and fluorinated poled copolymers at λ=1.55μm

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2006.03.042 ◽

2006 ◽

Vol 352 (23-25) ◽

pp. 2339-2342 ◽

Cited By ~ 20

Author(s):

F. Michelotti ◽

A. Belardini ◽

A. Rousseau ◽

A. Ratsimihety ◽

G. Schoer ◽

...

Keyword(s):

Sandwich Structures ◽

Transparent Electrodes ◽

Electro Optic

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Near-infrared transparent electrodes for precision Teng–Man electro-optic measurements: In2O3 thin-film electrodes with tunable near-infrared transparency

Applied Physics Letters ◽

10.1063/1.2089184 ◽

2005 ◽

Vol 87 (16) ◽

pp. 161107 ◽

Cited By ~ 24

Author(s):

Lian Wang ◽

Yu Yang ◽

Tobin J. Marks ◽

Zhifu Liu ◽

Seng-Tiong Ho

Keyword(s):

Thin Film ◽

Near Infrared ◽

Transparent Electrodes ◽

Electro Optic ◽

Thin Film Electrodes

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Precision Teng-Man Electro-Optic Measurements Using Highly Near-Infrared Transparent Electrodes

MRS Proceedings ◽

10.1557/proc-0928-gg09-08 ◽

2006 ◽

Vol 928 ◽

Author(s):

Lian Wang ◽

Yu Yang ◽

Zhifu Liu ◽

Tobin J. Marks ◽

Seng-Tiong Ho

Keyword(s):

Thin Films ◽

Room Temperature ◽

Measurement Accuracy ◽

Near Infrared ◽

Film Deposition ◽

Transparent Electrodes ◽

Electro Optic ◽

First Time ◽

The Relationship ◽

Deposition Conditions

AbstractA series of highly near-infrared (NIR) transparent In2O3 thin films has been grown by ion-assisted deposition (IAD) at room temperature, and their optical and electrical properties characterized. The NIR transparency and the plasma edge can be engineered through control of the film deposition conditions. The as-deposited In2O3 thin films were employed as transparent electrodes for direct electro-optic (EO) characterization measurements via the Teng-Man technique. Using LiNbO3 as the standard, the relationship between the degree of electrode NIR transparency and Teng-Man EO measurement accuracy was evaluated. It is found that In2O3 electrodes can be tailored to be highly NIR transparent, thus providing more accurate Teng-Man EO coefficient quantification than ITO (tin-doped indium oxide). In addition, the EO coefficients of stilbazolium-based self-assembled superlattice (SAS) thin films were directly determined for the first time by the Teng-Man technique using an optimized In2O3 electrode. EO coefficients r33 of 42.2, 13.1, and 6.4 pm/V are obtained at 633, 1064, and 1310 nm, respectively.

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Epitaxial ferroelectric thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170591 ◽

1994 ◽

Vol 52 ◽

pp. 572-573

Author(s):

S. G. Ghonge ◽

E. Goo ◽

R. Ramesh ◽

R. Haakenaasen ◽

D. K. Fork

Keyword(s):

Single Crystal ◽

Work Function ◽

Nonvolatile Memory ◽

Ferroelectric Properties ◽

Electrical Contact ◽

Memory Devices ◽

Ferroelectric Films ◽

Si Substrates ◽

Electro Optic ◽

Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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