SPIE Newsroom ◽  
2016 ◽  
Author(s):  
Marcin Gębski ◽  
Maciej Dems ◽  
Michał Wasiak ◽  
James A. Lott ◽  
Tomasz Czyszanowski

1996 ◽  
Vol 449 ◽  
Author(s):  
T. Honda ◽  
F. Koyama ◽  
K. Iga

ABSTRACTThe threshold current density of GaN-based vertical cavity surface emitting lasers (VCSELs) has been estimated. It is clarified that the introduction of a quantum well structure as an active layer is very effective for a low threshold operation and that high reflective mirrors are required for low threshold GaN-based VCSELs. Also, attempts on micro-fabrication process of GaN is presented.


1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-3 ◽  
Author(s):  
J. Jacquet ◽  
P. Salet ◽  
A. Plais ◽  
F. Brillouet ◽  
E. Derouin ◽  
...  

1993 ◽  
Vol 29 (5) ◽  
pp. 466 ◽  
Author(s):  
K.D. Choquette ◽  
N. Tabatabaie ◽  
R.E. Leibenguth

1993 ◽  
Vol 29 (10) ◽  
pp. 918-919 ◽  
Author(s):  
P. Ressel ◽  
H. Strusny ◽  
S. Gramlich ◽  
U. Zeimer ◽  
J. Sebastian ◽  
...  

2004 ◽  
Vol 04 (04) ◽  
pp. L635-L641
Author(s):  
STEFANO BERI ◽  
PETER V. E. McCLINTOCK ◽  
RICCARDO MANNELLA

A numerical approach based on dynamic importance sampling (DIMS) is applied to investigate polarization switches in vertical-cavity surface-emitting lasers. A polarization switch is described as an activation process in a two-dimensional nonequilibrium system. DIMS accelerates the simulations and allows access to noise intensities that were previously forbidden, revealing qualitative changes in the shape of the transition paths with noise intensity.


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