SOI CMOS Digital Circuits

Keyword(s):  
1988 ◽  
Vol 49 (C2) ◽  
pp. C2-459-C2-462 ◽  
Author(s):  
F. A.P. TOOLEY ◽  
B. S. WHERRETT ◽  
N. C. CRAFT ◽  
M. R. TAGHIZADEH ◽  
J. F. SNOWDON ◽  
...  
Keyword(s):  

Author(s):  
Camelia Hora ◽  
Stefan Eichenberger

Abstract Due to the development of smaller and denser manufacturing processes most of the hardware localization techniques cannot keep up satisfactorily with the technology trend. There is an increased need in precise and accurate software based diagnosis tools to help identify the fault location. This paper describes the software based fault diagnosis method used within Philips, focusing on the features developed to increase its accuracy.


2020 ◽  
Vol 96 (3s) ◽  
pp. 627-630
Author(s):  
А.Д. Калёнов ◽  
И.И. Мухин ◽  
В.В. Репин

Представляется сравнение СВЧ-ключей, проектируемых в разных конструктивно-технологических базисах: КНИ, КМОП, биполярные и GaAs. Определенные трудности существуют при разработке ключей на сверхвысоких частотах, в разных технологиях необходимо учитывать различные эффекты. Наличие паразитных эффектов сильно осложняет разработку. В статье приводится оценка влияния паразитных эффектов на основные параметры СВЧ-ключей в разных конструктивно-технологических базисах. The paper offers a comparison of microwave keys designed in different structural and technological bases: SOI, CMOS, bipolar and GaAs. There are some difficulties in developing the keys to the ultra-high frequencies, in different technologies it is necessary to consider various effects. The presence of parasitic effects greatly complicates the development. The article provides an assessment of the influence of parasitic effects on the basic parameters of microwave keys in different structural and technological bases.


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